scholarly journals Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125105 ◽  
Author(s):  
Muntaser Al-Mansoori ◽  
Sahar Al-Shaibani ◽  
Ahlam Al-Jaeedi ◽  
Jisung Lee ◽  
Daniel Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Flow Rate ◽  
Tin Oxide ◽  
Gas Flow ◽  
Rf Sputtering ◽  
Gas Flow Rate ◽  
Oxide Thin Films

Characterizations and Process Parameters of Titanium Dioxide Thin Film by RF Sputtering

2013 ◽  
Vol 22 ◽  
pp. 9-21 ◽  
Author(s):  
Chii Rong Yang ◽  
Tun Ping Teng ◽  
Yun Yu Yeh
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Flow Rate ◽  
Gas Flow ◽  
Deposition Time ◽  
Photocatalytic Performance ◽  
Oxidation Process ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Oxygen Ratio

In this study, we successfully combined RF magnetron sputtering of a pure Ti metal target and one-stage oxidation process with a wider oxygen ratio (10%-90%) and total sputtering flow rate (16-24 sccm) to produce TiO2thin films on a glass substrate. The crystallization, morphology, roughness, and thickness of the thin films were examined using XRD, HR-FESEM, AFM, and a profilometer. Subsequently, the photocatalytic performance was examined using a spectrometer and video tensiometer. The experimental results show that the TiO2thin films with a majority of anatase and higher roughness exhibit superior photocatalytic performance; the total sputtering gas flow rate of 18 sccm and oxygen content at 10% is the optimal option. Finally, an empirical formula to correlate the film thickness with deposition time was conducted for the sputtering flow rate of 18 sccm and the oxygen content of 10%.

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

scholarly journals ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio

2012 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Iping Suhariadi ◽  
Naho Itagaki ◽  
Kazunari Kuwahara ◽  
Koichi Oshikawa ◽  
Daisuke Yamashita ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Buffer Layers ◽  
Flow Rate Ratio ◽  
Gas Flow Rate ◽  
Ar Gas
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