Modeling of negative ion extraction from a magnetized plasma source: Derivation of scaling laws and description of the origins of aberrations in the ion beam

2018 ◽  
Vol 25 (2) ◽  
pp. 023510 ◽  
Author(s):  
G. Fubiani ◽  
L. Garrigues ◽  
J. P. Boeuf
2005 ◽  
Vol 107 ◽  
pp. 21-24 ◽  
Author(s):  
M. Medhisuwakul ◽  
Thiraphat Vilaithong ◽  
Jürgen Engemann

A 13.56 MHz radio-frequency (rf) driven multicusp ion source has been constructed [1] to produce a high argon ion current density. Milliampere-range argon ion current can be extracted from the source. An in-waveguide microwave plasma source has been utilized as the ion beam neutralizer [2]. The neutralization source was placed 20 cm downstream from the extraction system. With the former extraction system, comprised of extraction electrodes and an Einzel lens, the electrons from the neutralizer were attracted to the high positive potential of the lens. Consequently, the potential of the lens drops and the beam is diverged. To suppress electrons from being accelerated to the Einzel lens a negatively biased electrode was placed before the last electrode, which is grounded, to produce a retarding electric field for electrons. The hole of the electrode was made small to make sure that the potential at the center is negative enough to suppress electrons. All simulations have been performed with the KOBRA3-INP simulation software. The results of the beam shape from the simulation will be presented.


2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato

2021 ◽  
Author(s):  
O. Sotnikov ◽  
A. Sanin ◽  
Yu. Belchenko ◽  
A. A. Ivanov ◽  
G. Abdrashitov ◽  
...  
Keyword(s):  
Ion Beam ◽  

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.


1977 ◽  
Vol 48 (5) ◽  
pp. 571-572 ◽  
Author(s):  
K. Yatsu ◽  
Y. Nozaki ◽  
S. Hagiwara ◽  
S. Miyoshi
Keyword(s):  
Ion Beam ◽  

2018 ◽  
Vol 89 (10) ◽  
pp. 103504 ◽  
Author(s):  
R. Agnello ◽  
M. Barbisan ◽  
I. Furno ◽  
Ph. Guittienne ◽  
A. A. Howling ◽  
...  

2016 ◽  
Vol 87 (2) ◽  
pp. 02B917 ◽  
Author(s):  
E. Sartori ◽  
T. J. Maceina ◽  
P. Veltri ◽  
M. Cavenago ◽  
G. Serianni

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