Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing

2005 ◽  
Vol 86 (3) ◽  
pp. 031912 ◽  
Author(s):  
R. Karmouch ◽  
J.-F. Mercure ◽  
Y. Anahory ◽  
F. Schiettekatte
Keyword(s):  
Ion Energy ◽  
Defect Annealing ◽  
Ion Implanted

Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors

2017 ◽  
Vol 122 (11) ◽  
pp. 115701 ◽  
Author(s):  
Alexander Azarov ◽  
Augustinas Galeckas ◽  
Elke Wendler ◽  
Josef Ellingsen ◽  
Edouard Monakhov ◽  
...  
Keyword(s):  
Oxide Semiconductors ◽  
Defect Annealing ◽  
Ion Implanted

A Critical Regime for Amorphization of Ion Implanted Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
R. D. Goldberg ◽  
J. S. Williams ◽  
R. G. Elliman
Keyword(s):  
Damage Accumulation ◽  
Anomalous Behaviour ◽  
Critical Regime ◽  
Extended Defects ◽  
Complex Defect ◽  
Defect Annealing ◽  
Defect Accumulation ◽  
Residual Damage ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTA critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C are sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, mass and fluence have all been shown to influence the temperature— which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy

2006 ◽  
Vol 955 ◽  
Author(s):  
Masataka Satoh ◽  
T Saitoh ◽  
K Nomoto ◽  
T Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Hall Effect Measurement ◽  
Ion Energy ◽  
Dose Ranging ◽  
Van Der Pauw ◽  
Induced Defects ◽  
Ion Implanted

ABSTRACTThe sheet resistance and sheet carrier concentration for Si ion implanted GaN have been investigated as a function of Si ion dosages and ion's energy using van der Pauw method and Hall effect measurement. Si ion implanted GaN is annealed at 1200 °C for 10 sec in N2 gas flow with 50 nm-thick SiNx cap layer to avoid dissociation of GaN. For Si ion energy of 30 keV, the sheet resistance is decreased from 103 to 56 ohm/sq. for the dose ranging from 1 × 1014 to 2 × 1015/cm2. For the Si dose larger than 2 × 1015/cm2, the sheet carrier concentration is saturated around 1 ×s 1015/cm2. Si ion implanted GaN with energy of 50, 80, and 120 keV at a dose of 2 × 1015/cm2 also reveal the sheet carrier concentration of about 1 × 1015/cm2 with the decrease of electron mobility. It is suggested that the implanted Si donors are strongly compensated by the residual implantation-induced defects.

Defect annealing investigation in ion implanted Si by CESR technique

1976 ◽  
Vol 31 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. V. Dvurechensky ◽  
N. N. Cerasimenko ◽  
V. B. Glazman
Keyword(s):  
Defect Annealing ◽  
Ion Implanted

scholarly journals Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure

1997 ◽  
Vol 2 ◽  
Author(s):  
A. Pelzmann ◽  
S. Strite ◽  
A. Dommann ◽  
C. Kirchner ◽  
Markus Kamp ◽  
...  
Keyword(s):  
Optical Quality ◽  
X Ray Diffraction ◽  
High Optical Quality ◽  
X Ray ◽  
Mocvd Reactor ◽  
Defect Annealing ◽  
Optical Activation ◽  
Gan Crystal ◽  
Ion Implanted

We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowing N2, an atmospheric pressure MOCVD reactor under flowing NH3 or N2, and under an N2 overpressure of 190 atm. The observed improvement in the optical quality of GaN:Zn annealed under N2 overpressure yields further insights into the trade-off between defect annealing and N loss from the GaN crystal.

Creation and Annealing out Mechanism of Defects in Ion-Implanted Si Crystals Investigated by Positron Annihilation

1997 ◽  
Vol 470 ◽  
Author(s):  
S. Tanigawa
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Point Defects ◽  
General Feature ◽  
Positron Beam ◽  
Point Of View ◽  
Ion Energy ◽  
Energy Variable ◽  
Ion Species ◽  
Ion Implanted

ABATRACTVacancy-type defects in Si crystals introduced by ion implantation have been investigated by an energy-variable positron beam The present paper describes the general feature of point defects induced by ion implantation from the point of view of their dependence on implanted ion species, ion dose, ion energy, implanted targets, thermal after implantation, the presence of oxide overlayers and so on.

Defect annealing in ion implanted silicon carbide

1997 ◽  
Vol 12 (7) ◽  
pp. 1727-1733 ◽  
Author(s):  
L. Calcagno ◽  
M. G. Grimaldi ◽  
P. Musumeci
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Optical Measurements ◽  
Temperature Range ◽  
Damage Degree ◽  
Defect Annealing ◽  
Initial Damage ◽  
Lattice Damage ◽  
Amorphous States ◽  
Ion Implanted

The recovery of lattice damage in ion implanted 6H-SiC single crystals by thermal annealing has been investigated in the temperature range 200–1000 °C by Rutherford backscattering spectrometry-channeling and by optical measurements in the UV-visible wavelength. The damage was produced by implantation at room temperature of 60 keV N+ at fluences between 1014 and 5 × 1015 ions/cm2. At low fluences a partially damaged layer with defects distributed over a depth comparable to the projected ion range was obtained. At higher fluences a continuous amorphous layer was formed. The defect annealing behavior depended on the initial damage morphology: an almost total defect recovery occurred in partially damaged layers with kinetics depending on the initial damage degree. If the defect concentration is smaller than 20 at.% the annealing rate is independent of temperature. Amorphous layers were stable in the investigated temperature range and no epitaxial regrowth occurred. After annealing, a strong change in the optical properties of the amorphous phase was observed indicating a recovery of the electronic properties of the material, suggesting the existence of several amorphous states and the relaxation of the amorphous that evolves toward thermodynamic states characterized by lower free energy values.

A Critical Regime for AMorphization of Ion Implanted Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
R. D. Goldberg ◽  
J. S. Williams ◽  
R. G. Elliman
Keyword(s):  
Damage Accumulation ◽  
Anomalous Behaviour ◽  
Critical Regime ◽  
Extended Defects ◽  
Complex Defect ◽  
Defect Annealing ◽  
Defect Accumulation ◽  
Residual Damage ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTA critical regime has been identified for ion implanted silicon where only slight changes in temperature can dramatically affect the levels of residual damage. In this regime decreases of only 5° C aie sufficient to induce a crystalline-to-amorphous transformation in material which only exhibited the build-up of extended defects at higher temperatures. Traditional Models of damage accumulation and amorphization have proven inapplicable to this regime which exists whenever dynamic defect annealing and damage production are closely balanced. Irradiating ion flux, Mass and fluence have all been shown to influence the temperature—which varies over a range of 300° C for ion species ranging from C to Xe—at which the anomalous behaviour occurs. The influence of ion fluence suggests that complex defect accumulation plays an important role in amorphization. Results are presented which further suggest that the process is nucleation limited in this critical regime.

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