Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates

2005 ◽  
Vol 245 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
W.G. Han ◽  
S.G. Kang ◽  
T.W. Kim ◽  
D.W. Kim ◽  
W.J. Cho
2009 ◽  
Vol 42 (10) ◽  
pp. 105410 ◽  
Author(s):  
M Subramanian ◽  
P Thakur ◽  
S Gautam ◽  
K H Chae ◽  
M Tanemura ◽  
...  

2009 ◽  
Vol 24 (6) ◽  
pp. 2006-2010 ◽  
Author(s):  
J.W. Shin ◽  
J.Y. Lee ◽  
Y.S. No ◽  
T.W. Kim ◽  
W.K. Choi

High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin films showed the domain boundaries of a (0) plane with a transition zone and a (1) plane without a transition zone. The 30° in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5° in comparison with that of neighboring 30° in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.


2015 ◽  
Vol 85 ◽  
pp. 433-437 ◽  
Author(s):  
Karmvir Singh ◽  
Vanita Devi ◽  
Rakesh Dhar ◽  
Devendra Mohan

2013 ◽  
Vol 16 (3) ◽  
pp. 587-592 ◽  
Author(s):  
Zhanchang Pan ◽  
Xinlong Tian ◽  
Guanghui Hu ◽  
Chumin Xiao ◽  
Zhigang Wei ◽  
...  

1994 ◽  
Vol 354 ◽  
Author(s):  
Laurence A. Gea ◽  
L. A. Boatner ◽  
Janet Rankin ◽  
J. D. Budai

AbstractThe oxides of vanadium VO2 and V2O3 are of fundamental and practical interest since they undergo structural phase transitions during which large variations in their optical and electronic properties are observed. In the present work, we report the formation of buried precipitates of V2O3 in sapphire by ion implantation and thermal annealing. It was found that the co-implantation of oxygen and vanadium was required in order to form nanophase V2O3 precipitates. Additionally, these precipitates, which formed only following an anneal of the co-implanted sample under reducing conditions, are coherent with the sapphire lattice. Two epitaxial relationships were observed: (0001)V2O3//(0001) ɑ-Al2O3 and (11-20)V2O3//(0001) ɑ-Al2O3. This finding is in agreement with results obtained elsewhere for thin films of V2O3 deposited on c-axis-oriented sapphire.


2013 ◽  
Vol 265 ◽  
pp. 870-877 ◽  
Author(s):  
Zhanchang Pan ◽  
Xinlong Tian ◽  
Shoukun Wu ◽  
Xia Yu ◽  
Zhuliang Li ◽  
...  

Optik ◽  
2021 ◽  
Vol 228 ◽  
pp. 166134
Author(s):  
Bijayalaxmi Sahoo ◽  
Siddhartha Kumar Pradhan ◽  
Dilip Kumar Mishra ◽  
Susanta Kumar Sahoo ◽  
Rati Ranjan Nayak ◽  
...  

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