Surface roughness dependence of the electrical resistivity of W(001) layers

2017 ◽  
Vol 122 (9) ◽  
pp. 095304 ◽  
Author(s):  
P. Y. Zheng ◽  
T. Zhou ◽  
B. J. Engler ◽  
J. S. Chawla ◽  
R. Hull ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity

Sputtered Silicon for Microstructures and Microcavities

1999 ◽  
Author(s):  
Kenneth A. Honer ◽  
Gregory T. A. Kovacs
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Film Thickness ◽  
Plane Stress ◽  
Strain Gradient ◽  
Sacrificial Layer ◽  
Low Temperature Annealing ◽  
Deposition Power ◽  
Density Surface

Abstract Sputtered silicon can be used to make released microstructures at temperatures compatible with prefabricated aluminum-metallized CMOS circuitry. The fabrication sequence is similar to LPCVD polysilicon processes and involves a wet release from an oxide sacrificial layer. This process was used to fabricate a variety of test structures, including cantilevers, combs, and spirals. During release of the structures porosity to HF was observed in films up to 5 μm thick. This porosity resulted in the formation of completely enclosed cavities formed beneath silicon membranes over oxide sacrificial layers, and may have implications for the packaging of released devices. Several properties of the sputtered silicon films were investigated, including their in-plane stress, strain gradient, film density, surface roughness, electrical resistivity, and permeability. The dependency of these properties on deposition power, pressure, and film thickness as well as the effects of low-temperature annealing were also investigated.

scholarly journals Printability and Properties of Conductive Inks on Primer-Coated Surfaces

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Hector R. Mendez-Rossal ◽  
Gernot M. Wallner
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Screen Printing ◽  
Good Adhesion ◽  
Laser Confocal Microscopy ◽  
Conductive Inks ◽  
Coated Metal ◽  
Coated Surfaces ◽  
Resistivity Testing

Conductive inks’ performance is affected by the printing conditions and the substrate’s properties. In this study, one graphite-, one polymer-, and two silver-based conductive inks were printed on four primer-coated metal substrates by screen printing. The compatibility and wettability between the inks and the primers were evaluated by infrared spectroscopy and surface energy measurements. The printed structures were characterized by laser confocal microscopy, peel-off tape testing, and four-point probe electrical resistivity testing. In general, silver inks exhibited the best performance in terms of printability and electrical conductivity. The graphite ink presented the worst printing, adhesion, and functional properties. The polymer-based ink revealed poor wettability but good adhesion and functionality. The surface roughness, energy, and polarity of the primer coating had no significant influence on the electrical conductivity of the printed inks.

ELECTRICAL RESISTIVITY OF NANOSTRUCTURED PLATINUM AND GOLD THIN FILMS

2004 ◽  
Vol 11 (02) ◽  
pp. 223-227 ◽  
Author(s):  
M. C. SALVADORI ◽  
A. R. VAZ ◽  
R. J. C. FARIAS ◽  
M. CATTANI
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Room Temperature ◽  
Theoretical Estimate ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
Correlation Lengths ◽  
Gold Thin Films

We have measured, at room temperature, the resistivity, the surface roughness and the lateral surface correlation lengths of nanostructured platinum and gold thin films. The films' thickness d, deposited by vacuum arc plasma, is in the range 1.31≤d≤11.66 nm for platinum and 1.77≤d≤10.46 nm for gold. A theoretical estimate of our experimental data has been made.

Surface Roughness and Electrical Resistivity of High-purity Zinc Irradiated with Nd:YAG Laser Pulses

2015 ◽  
Vol 2 (10) ◽  
pp. 5587-5591 ◽  
Author(s):  
M.Z. Butt ◽  
Dilawar Ali ◽  
M. Usman Tanveer ◽  
S. Naseem
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
High Purity ◽  
Nd:Yag Laser ◽  
Laser Pulses

scholarly journals Evaluation of electrical resistivity, residual stress and surface roughness of sputtering indium tin oxide films with different thicknesses

2021 ◽  
Vol 51 (4) ◽  
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin ◽  
Shu-Hui Su
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Measurement Results ◽  
Ito Thin Films ◽  
Tin Oxide Films ◽  
Ito Films

This paper investigates the influence of film thickness on the electrical and mechanical properties of transparent indium tin oxide (ITO) thin films. Two groups of ITO thin films deposited on unheated substrates were prepared by the radio-frequency magnetron sputtering technique. The biaxial residual stress and surface roughness for two groups of ITO thin films were measured by a Twyman–Green interferometer and a Linnik microscopic interferometer, respectively. The electrical resistivity of the ITO films was measured by a four-point probe apparatus, the thickness was determined mechanically with a profilometer. The measurement results show that the average resistivity of ITO thin films decreases with increasing the deposited thickness. The compressive residual stress in the ITO thin films decreases with increasing the deposited thickness. We also find that an anisotropic stress in the two groups of ITO films is more compressive in a certain direction. The RMS surface roughness in the two groups of ITO films is less than 1 nm.

Package Reliability of the SiC Power Modules in Harsh Environments

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000139-000144
Author(s):  
Fengqun Lang ◽  
Hiroshi Yamaguchi ◽  
Hiroshi Sato
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Thermal Cycling ◽  
Isothermal Aging ◽  
Harsh Environments ◽  
Die Attach ◽  
Power Modules ◽  
Almost All ◽  
Package Reliability

To evaluate the package reliability of the SiC power modules in harsh environments, the SiC Schottky Barrier Diodes (SBDs) were die bonded to the Si3N4/Cu/Ni(P) substrate with Au-Ge eutectic solder using a vacuum reflow furnace. The Si3N4/Cu/Ni(P) substrates are active metalized copper (AMC). The bonded samples were isothermally aged at 330°C and tested under thermal cycling conditions in the temperature range of −40–300°C in air. During the isothermal aging, cracks of the Ni(P) layer developed, resulting in oxidation of the Cu power path. Decrease in the die bond strength and increase in the electrical resistivity were observed due to the Cu power path oxidation and the growth of the Ni-Ge intermetalic compound (IMC) in the joint. Under the thermal cycling conditions, the metallization of the substrate suffers from serious surface roughness, which greatly degrades the die-attach reliability. The Al electrode was found to seriously exfoliate from the SiC-SBDs due to the thermal stress. After 521 cycles, almost all the Al electrode exfoliated form the anode. Benefit from the excellent mechanical properties of Si3N4, no detachment of the Cu layer was observed from the Si3N4 substrate after 1079 cycles, while the Cu layer detached from the AlN substrate only after 12 cycles.

scholarly journals Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Chiuan Kuo ◽  
Chi-Chang Liu ◽  
Yaug-Fea Jeng ◽  
Chung-Chih Lin ◽  
Yeuh-Yeong Liou ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Molybdenum Oxide ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Visible Transmittance ◽  
Deposited Film

Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness of 8.75 nm and an average visible transmittance of 78.7%.

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