Surface roughness and electrical resistivity of high-purity zinc irradiated with nanosecond visible laser pulses

2014 ◽  
Vol 305 ◽  
pp. 466-473 ◽  
Author(s):  
M.Z. Butt ◽  
Dilawar Ali ◽  
M. Usman Tanveer ◽  
S. Naseem
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
High Purity ◽  
Laser Pulses ◽  
Visible Laser

Surface Roughness and Electrical Resistivity of High-purity Zinc Irradiated with Nd:YAG Laser Pulses

2015 ◽  
Vol 2 (10) ◽  
pp. 5587-5591 ◽  
Author(s):  
M.Z. Butt ◽  
Dilawar Ali ◽  
M. Usman Tanveer ◽  
S. Naseem
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
High Purity ◽  
Nd:Yag Laser ◽  
Laser Pulses

scholarly journals High-quality net shape geometries from additively manufactured parts using closed-loop controlled ablation with ultrashort laser pulses

2020 ◽  
Vol 9 (1-2) ◽  
pp. 101-110 ◽  
Author(s):  
Daniel Holder ◽  
Artur Leis ◽  
Matthias Buser ◽  
Rudolf Weber ◽  
Thomas Graf
Keyword(s):  
Surface Roughness ◽  
Closed Loop ◽  
High Surface ◽  
Laser Pulses ◽  
Ultrashort Laser Pulses ◽  
Minimum Thickness ◽  
High Quality ◽  
Surface Optical ◽  
The Individual ◽  
Ultrashort Laser

AbstractAdditively manufactured parts typically deviate to some extent from the targeted net shape and exhibit high surface roughness due to the size of the powder grains that determines the minimum thickness of the individual slices and due to partially molten powder grains adhering on the surface. Optical coherence tomography (OCT)-based measurements and closed-loop controlled ablation with ultrashort laser pulses were utilized for the precise positioning of the LPBF-generated aluminum parts and for post-processing by selective laser ablation of the excessive material. As a result, high-quality net shape geometries were achieved with surface roughness, and deviation from the targeted net shape geometry reduced by 67% and 63%, respectively.

Electrical resistivity recovery of cold-worked high purity nickel

1967 ◽  
Vol 15 (3) ◽  
pp. 525-533 ◽  
Author(s):  
H Kressel ◽  
D.W Short ◽  
N Brown
Keyword(s):  
Electrical Resistivity ◽  
High Purity ◽  
Cold Worked

Surface roughness dependence of the electrical resistivity of W(001) layers

2017 ◽  
Vol 122 (9) ◽  
pp. 095304 ◽  
Author(s):  
P. Y. Zheng ◽  
T. Zhou ◽  
B. J. Engler ◽  
J. S. Chawla ◽  
R. Hull ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity

Electrical Resistivity of High Purity Chromium Single Crystal

1998 ◽  
Vol 167 (2) ◽  
pp. 443-448
Author(s):  
H. Tomioka ◽  
H. Yoshizawa ◽  
K. Suzuki ◽  
Yu.V. Milman ◽  
N. A. Krapivka ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Single Crystal ◽  
High Purity

Residual Electrical Resistivity Investigations on High Purity Gallium

1987 ◽  
Vol 78 (7) ◽  
pp. 478-484
Author(s):  
Dezsö Noväk ◽  
Sändor Meszäros ◽  
Kälmän Vad ◽  
Käroly Botos
Keyword(s):  
Electrical Resistivity ◽  
High Purity

Sputtered Silicon for Microstructures and Microcavities

1999 ◽  
Author(s):  
Kenneth A. Honer ◽  
Gregory T. A. Kovacs
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Film Thickness ◽  
Plane Stress ◽  
Strain Gradient ◽  
Sacrificial Layer ◽  
Low Temperature Annealing ◽  
Deposition Power ◽  
Density Surface

Abstract Sputtered silicon can be used to make released microstructures at temperatures compatible with prefabricated aluminum-metallized CMOS circuitry. The fabrication sequence is similar to LPCVD polysilicon processes and involves a wet release from an oxide sacrificial layer. This process was used to fabricate a variety of test structures, including cantilevers, combs, and spirals. During release of the structures porosity to HF was observed in films up to 5 μm thick. This porosity resulted in the formation of completely enclosed cavities formed beneath silicon membranes over oxide sacrificial layers, and may have implications for the packaging of released devices. Several properties of the sputtered silicon films were investigated, including their in-plane stress, strain gradient, film density, surface roughness, electrical resistivity, and permeability. The dependency of these properties on deposition power, pressure, and film thickness as well as the effects of low-temperature annealing were also investigated.

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