scholarly journals Modeling of stresses and electric fields in piezoelectric multilayer: Application to multi quantum wells

AIP Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 075306 ◽  
Author(s):  
Dhaneshwar Mishra ◽  
Soong Hyeong Lee ◽  
Youjung Seo ◽  
Y. Eugene Pak
Keyword(s):  
Quantum Wells ◽  
Electric Fields

Coherent model for resonant tunneling of electrons in double quantum wells under electric fields

1994 ◽  
Vol 49 (8) ◽  
pp. 5434-5437 ◽  
Author(s):  
Shi-rong Jin ◽  
Zhong-ying Xu ◽  
Jin-sheng Luo
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Resonant Tunneling ◽  
Double Quantum

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

scholarly journals Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells

2000 ◽  
Vol 639 ◽  
Author(s):  
E.M. Goldys ◽  
M. Godlewski ◽  
M.R. Phillips ◽  
A.A. Toropov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Free Exciton ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Recombination Mechanism ◽  
Decay Times ◽  
Piezoelectric Fields

ABSTRACTWe have examined multiple quantum well AlGaN/GaN structures with several quantum wells of varying widths. The structures had strain-free quantum wells and strained barriers. Strong piezoelectric fields in these structures led to a large red shift of the PL emission energies and long decay times were also observed. While the peak energies could be modelled using the effective mass approximation, the calculated free exciton radiative lifetimes were much shorter than those observed in experiments, indicating an alternative recombination mechanism, tentatively attributed to localised excitons. Cathodoluminescence depth profiling revealed an unusually small penetration range of electrons suggesting that electron-hole pairs preferentially remain within the multiple quantum well region due to the existing electric fields. Spatial fluctuations of the cathodoluminescence intensity were also observed.

Magnetoexciton escape from shallow quantum wells induced by in-plane electric fields

1999 ◽  
Vol 60 (23) ◽  
pp. 16027-16030 ◽  
Author(s):  
A. Getter ◽  
I. E. Perakis
Keyword(s):  
Quantum Wells ◽  
Electric Fields

Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

2019 ◽  
Vol 36 (7) ◽  
pp. 077201
Author(s):  
Xiao-di Xue ◽  
Yu Liu ◽  
Lai-pan Zhu ◽  
Wei Huang ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Spin Transport ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Photoluminescence study of undoped‐like GaAs/AlGaAs quantum wells in high electric fields

1993 ◽  
Vol 74 (2) ◽  
pp. 1188-1194
Author(s):  
Naoteru Shigekawa ◽  
Tomofumi Furuta ◽  
Kunihiro Arai ◽  
Masaaki Tomizawa
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Photoluminescence Study ◽  
High Electric Fields

scholarly journals Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Performance ◽  
Stark Effect ◽  
Electronic Band Structure ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Set ◽  
Electronic Band ◽  
Level Splitting

AbstractIdentification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.

Rashba Effect and Beating Patterns in the THz Magneto-Photoresponse of a HgTe-Based Two-Dimensional Electron Gas

2015 ◽  
Vol 24 (01n02) ◽  
pp. 1520003
Author(s):  
M. Pakmehr ◽  
C. Brüne ◽  
H. Buhmann ◽  
L. W. Molenkamp ◽  
B. D. McCombe
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Electron Gas ◽  
Band Alignment ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Energy Formula ◽  
Electronic Dispersion ◽  
Dimensional Electron Gas

HgTe quantum wells with a gapped single Dirac cone electronic dispersion relation have been investigated by THz magneto-photoresponse (PR) and magneto-transport measurements. The QW sample has the conventional band alignment with the well thickness (6.1 nm) slightly smaller than the critical thickness for the topological phase transition. The effective gap of this structure is roughly 10 meV, and the large sheet density ([Formula: see text] m-2) of the two-dimensional electron gas (2DEG) results in a very large Fermi energy ([Formula: see text] meV). We have found several interesting effects at these high densities. In this paper we focus on an observed beating of quantum oscillations in the PR signal (at 1.83 THz) and compare it with direct measurements of oscillations in the longitudinal magneto-resistance (Rxx). The mechanism for the PR is cyclotron resonance absorption heating of the electrons (an electron bolometric effect). We attribute the beating to Rashba splitting of the spin states, which is barely observable in direct Rxx measurements under strong gate-induced electric fields.

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