Photoluminescence study of undoped‐like GaAs/AlGaAs quantum wells in high electric fields

1993 ◽  
Vol 74 (2) ◽  
pp. 1188-1194
Author(s):  
Naoteru Shigekawa ◽  
Tomofumi Furuta ◽  
Kunihiro Arai ◽  
Masaaki Tomizawa
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Photoluminescence Study ◽  
High Electric Fields

Photoluminescence from GaAs quantum wells under high electric fields

1986 ◽  
Vol 59 (11) ◽  
pp. 3925-3927 ◽  
Author(s):  
Janet L. Pan ◽  
Ralph A. Höpfel ◽  
Jagdeep Shah
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
High Electric Fields

Tunnel radiation in the luminescence spectra of GaN-based heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
M. Leroux ◽  
S. Dalmasso
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Spectral Band ◽  
Luminescence Spectra ◽  
Energy Diagram ◽  
Radiation Spectra ◽  
Piezoelectric Fields ◽  
High Electric Fields ◽  
Tunnel Effects ◽  
Ingan Quantum Wells

ABSTRACTTunnel effects in luminescence spectra and electrical properties of LEDs based on InGaN/GaN-heterostructures made by different technological groups were studied. The tunnel radiation in a spectral region of 1.9 - 2.7 eV predominates at low currents (J<0.2 mA). The position of the tunnel luminescence maximum orħħωmax is approximately equal to the voltage U, orħħωmax = eU. The low energy spectral band is described by the theory of tunnel radiative recombination. Tunnel recombination mechanisms in GaN-based heterostructures are caused by high electric fields in the active InGaN/GaN - MQW layers. The energy diagram of the structures is analyzed. The probability of tunnel radiation is higher due to piezoelectric fields in InGaN quantum wells. The tunnel radiation spectral band was not observed in the more effective LEDs with modulated doped MQWs. The spectra of GaN-based LEDs are compared with tunnel radiation spectra of GaAs-, InP- and GaSb- based LEDs. The equation: orħħωmax = eU describes experimental data in various semiconductors in the range 0.5–2.7 eV.

Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields

1995 ◽  
Vol 191 (1) ◽  
pp. 155-159 ◽  
Author(s):  
J. Kavaliauskas ◽  
G. Krivaite ◽  
A. Galickas ◽  
I. Šimkiene ◽  
U. Olin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
High Electric Fields

scholarly journals Strongly correlated indirect excitons in quantum wells in high electric fields

2006 ◽  
Vol 35 ◽  
pp. 197-208 ◽  
Author(s):  
Alexei Filinov ◽  
Patrick Ludwig ◽  
Yurii E Lozovik ◽  
Michael Bonitz ◽  
Heinrich Stolz
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Strongly Correlated ◽  
Indirect Excitons ◽  
High Electric Fields

Drift velocity of electrons in quantum wells in high electric fields

2009 ◽  
Vol 43 (4) ◽  
pp. 458-462 ◽  
Author(s):  
V. G. Mokerov ◽  
I. S. Vasil’evskii ◽  
G. B. Galiev ◽  
J. Požela ◽  
K. Požela ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Drift Velocity ◽  
High Electric Fields

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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