Increased magnetic damping in ultrathin films of Co2FeAl with perpendicular anisotropy

2017 ◽  
Vol 110 (25) ◽  
pp. 252409 ◽  
Author(s):  
Y. K. Takahashi ◽  
Y. Miura ◽  
R. Choi ◽  
T. Ohkubo ◽  
Z. C. Wen ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Perpendicular Anisotropy ◽  
Magnetic Damping

Magnetization processes in ultrathin films with high magnetization and perpendicular anisotropy

1996 ◽  
Vol 156 (1-3) ◽  
pp. 145-147 ◽  
Author(s):  
J.M. González ◽  
R. Smirnov-Rueda ◽  
J.M. Gallego ◽  
D. Givord ◽  
F. Robaut
Keyword(s):  
Ultrathin Films ◽  
Perpendicular Anisotropy ◽  
Magnetization Processes

Magnetic hysteresis of cobalt ultrathin films with perpendicular anisotropy

1991 ◽  
Vol 93 ◽  
pp. 605-608 ◽  
Author(s):  
P. Bruno ◽  
G. Bayreuther ◽  
P. Beauvillain ◽  
C. Chappert ◽  
G. Lugert ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Magnetic Hysteresis ◽  
Perpendicular Anisotropy

Magnetic relaxation and formation of magnetic domains in ultrathin films with perpendicular anisotropy

1996 ◽  
Vol 54 (9) ◽  
pp. 6465-6472 ◽  
Author(s):  
L. C. Sampaio ◽  
M. P. de Albuquerque ◽  
F. S. de Menezes
Keyword(s):  
Ultrathin Films ◽  
Magnetic Relaxation ◽  
Perpendicular Anisotropy ◽  
Magnetic Domains

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

scholarly journals Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 491
Author(s):  
Christoph Metzke ◽  
Fabian Kühnel ◽  
Jonas Weber ◽  
Günther Benstetter
Keyword(s):  
Thermal Properties ◽  
Ultrathin Films ◽  
Hexagonal Boron Nitride ◽  
Thermal Contact ◽  
Heat Transfer Process ◽  
Heat Propagation ◽  
Heat Fluxes ◽  
Detailed Knowledge ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.

scholarly journals Solvent-exchange process in MOF ultrathin films and its effect on CO2 and methanol adsorption

2021 ◽  
Vol 590 ◽  
pp. 72-81
Author(s):  
M.A. Andrés ◽  
P. Fontaine ◽  
M. Goldmann ◽  
C. Serre ◽  
O. Roubeau ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Exchange Process ◽  
Solvent Exchange ◽  
Methanol Adsorption

scholarly journals Deposition of Extended Ordered Ultrathin Films of Au 38 (SC 2 H 4 Ph) 24 Nanocluster using Langmuir–Blodgett Technique

Small ◽  
2021 ◽  
pp. 2005954
Author(s):  
Michal Swierczewski ◽  
Plinio Maroni ◽  
Alexis Chenneviere ◽  
Mohammad M. Dadras ◽  
Lay‐Theng Lee ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Langmuir Blodgett
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