Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

2017 ◽  
Vol 110 (23) ◽  
pp. 233109 ◽  
Author(s):  
Matthew P. Kirley ◽  
Tanouir Aloui ◽  
Jeffrey T. Glass
Keyword(s):  
Monolayer Graphene ◽  
Large Area ◽  
Electron Lithography

Multilayer Graphene-Based Carbon Interconnect

2012 ◽  
Vol 1407 ◽  
Author(s):  
Tianhua Yu ◽  
Edwin Kim ◽  
Nikhil Jain ◽  
Bin Yu
Keyword(s):  
Performance Metrics ◽  
Monolayer Graphene ◽  
Multilayer Graphene ◽  
Large Area ◽  
Electrical Stress ◽  
Oxygen Plasma Etching ◽  
Doping Technique ◽  
System Breakdown ◽  
Grown Graphene ◽  
On Chip

ABSTRACT3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Approaching total absorption at near infrared in a large area monolayer graphene by critical coupling

2014 ◽  
Vol 105 (18) ◽  
pp. 181105 ◽  
Author(s):  
Yonghao Liu ◽  
Arvinder Chadha ◽  
Deyin Zhao ◽  
Jessica R. Piper ◽  
Yichen Jia ◽  
...  
Keyword(s):  
Near Infrared ◽  
Monolayer Graphene ◽  
Total Absorption ◽  
Critical Coupling ◽  
Large Area

Influence of copper crystal surface on the CVD growth of large area monolayer graphene

2011 ◽  
Vol 151 (7) ◽  
pp. 509-513 ◽  
Author(s):  
L. Zhao ◽  
K.T. Rim ◽  
H. Zhou ◽  
R. He ◽  
T.F. Heinz ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Monolayer Graphene ◽  
Large Area ◽  
Copper Crystal ◽  
Cvd Growth

scholarly journals Realization of Large-Area Wrinkle-Free Monolayer Graphene Films Transferred to Functional Substrates

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Byeong-Ju Park ◽  
Jin-Seok Choi ◽  
Hyun-Suk Kim ◽  
Hyun-You Kim ◽  
Jong-Ryul Jeong ◽  
...  
Keyword(s):  
Monolayer Graphene ◽  
Large Area ◽  
Graphene Films

scholarly journals Criteria for the growth of large-area adlayer-free monolayer graphene films by chemical vapor deposition

2019 ◽  
Vol 5 (3) ◽  
pp. 463-470 ◽  
Author(s):  
Changqing Shen ◽  
Xingzhou Yan ◽  
Fangzhu Qing ◽  
Xiaobin Niu ◽  
Richard Stehle ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Large Area ◽  
Graphene Films

scholarly journals Effect of a Balanced Concentration of Hydrogen on Graphene CVD Growth

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
S. Chaitoglou ◽  
E. Pascual ◽  
E. Bertran ◽  
J. L. Andujar
Keyword(s):  
Copper Substrate ◽  
Single Layer ◽  
Chemical Vapor ◽  
Experimental System ◽  
Single Layer Graphene ◽  
Growth Time ◽  
Monolayer Graphene ◽  
Flow Ratio ◽  
Large Area ◽  
Hydrogen Flow

The extraordinary properties of graphene make it one of the most interesting materials for future applications. Chemical vapor deposition (CVD) is the synthetic method that permits obtaining large areas of monolayer graphene. To achieve this, it is important to find the appropriate conditions for each experimental system. In our CVD reactor working at low pressure, important factors appear to be the pretreatment of the copper substrate, considering both its cleaning and its annealing before the growing process. The carbon precursor/hydrogen flow ratio and its modification during the growth are significant in order to obtain large area graphene crystals with few defects. In this work, we have focused on the study of the methane and the hydrogen flows to control the production of single layer graphene (SLG) and its growth time. In particular, we observe that hydrogen concentration increases during a usual growing process (keeping stable the methane/hydrogen flow ratio) resulting in etched domains. In order to balance this increase, a modification of the hydrogen flow results in the growth of smooth hexagonal SLG domains. This is a result of the etching effect that hydrogen performs on the growing graphene. It is essential, therefore, to study the moderated presence of hydrogen.

Direct synthesis of phosphorus and nitrogen co-doped monolayer graphene with air-stable n-type characteristics

2014 ◽  
Vol 16 (38) ◽  
pp. 20392-20397 ◽  
Author(s):  
Yunzhou Xue ◽  
Bin Wu ◽  
Hongtao Liu ◽  
Jiahui Tan ◽  
Wenping Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Nitrogen Sources ◽  
Monolayer Graphene ◽  
Large Area ◽  
Co Doped

Large-area substitutional phosphorus–nitrogen co-doped monolayer graphene is directly synthesized on a Cu surface by chemical vapor deposition using molecules of phosphonitrilic chloride trimer as the phosphorus and nitrogen sources.

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