Influence of copper crystal surface on the CVD growth of large area monolayer graphene

2011 ◽  
Vol 151 (7) ◽  
pp. 509-513 ◽  
Author(s):  
L. Zhao ◽  
K.T. Rim ◽  
H. Zhou ◽  
R. He ◽  
T.F. Heinz ◽  
...  
Author(s):  
G. Lehmpfuhl

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.


2021 ◽  
pp. 100135
Author(s):  
Shuai Jia ◽  
Weibing Chen ◽  
Jing Zhang ◽  
Chen-Yang Lin ◽  
Hua Guo ◽  
...  

2012 ◽  
Vol 1407 ◽  
Author(s):  
Tianhua Yu ◽  
Edwin Kim ◽  
Nikhil Jain ◽  
Bin Yu

ABSTRACT3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.


2014 ◽  
Vol 105 (18) ◽  
pp. 181105 ◽  
Author(s):  
Yonghao Liu ◽  
Arvinder Chadha ◽  
Deyin Zhao ◽  
Jessica R. Piper ◽  
Yichen Jia ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Byeong-Ju Park ◽  
Jin-Seok Choi ◽  
Hyun-Suk Kim ◽  
Hyun-You Kim ◽  
Jong-Ryul Jeong ◽  
...  

2019 ◽  
Vol 5 (3) ◽  
pp. 463-470 ◽  
Author(s):  
Changqing Shen ◽  
Xingzhou Yan ◽  
Fangzhu Qing ◽  
Xiaobin Niu ◽  
Richard Stehle ◽  
...  

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