High resolution studies of the dissociative attachment of low energy electrons to state-selected sodium dimers

1996 ◽  
Author(s):  
K. Bergmann ◽  
M. Keil ◽  
M. Külz ◽  
A. Kortyna ◽  
D. Weyh ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Energy ◽  
Dissociative Attachment ◽  
Low Energy Electrons ◽  
Sodium Dimers

Dissociative attachment of low-energy electrons to acetonitrile

2021 ◽  
Vol 75 (8) ◽  
Author(s):  
Thomas F. M. Luxford ◽  
Jaroslav Kočišek ◽  
Lukas Tiefenthaler ◽  
Pamir Nag
Keyword(s):  
Low Energy ◽  
Dissociative Attachment ◽  
Low Energy Electrons

Lithography with low-energy electrons

1984 ◽  
Vol 42 ◽  
pp. 468-471
Author(s):  
T. H. Newman ◽  
R. F. W. Pease ◽  
K. J. Polasko ◽  
Y. W. Yau
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Proximity Effects ◽  
Low Energy ◽  
Low Energy Electrons ◽  
Circuit Fabrication ◽  
Electron Range ◽  
Exposure Process

Two prominent problems of electron beam lithography are slow throughput and proximity effects. The former arises from the serial nature of the exposure process; the current available in a beam of given resolution is limited by electron optical considerations and the resist sensitivity is limited by material considerations such that a dose of 1 μC/cm2 at 20 kV is required for the most sensitive resist and ten times that dose if high resolution is required.Proximity effects are caused by electrons scattered through lateral distances greater than the resolution of the pattern; a 20 keV electron in silicon has a range of about 3 μm whereas feature sizes are often less than 1 μm. Lowering the energy of the exposing electrons to, say, 2 keV would lower the electron range to less than 0.1 μm in silicon and thus effectively eliminate proximity effects as far as semiconductor circuit fabrication is concerned.

High-resolution spectroscopy of low-energy electrons emitted in nuclear transformations

1990 ◽  
Vol 61 (1-4) ◽  
pp. 1309-1313
Author(s):  
O. Dragoun ◽  
V. Brabec ◽  
A. Kovalík ◽  
M. Fiŝer ◽  
J. Novák ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Energy ◽  
High Resolution Spectroscopy ◽  
Low Energy Electrons

Vibrational dependence of negative-ion formation by dissociative attachment of low-energy electrons

1993 ◽  
Vol 48 (6) ◽  
pp. R4015-R4018 ◽  
Author(s):  
M. Külz ◽  
A. Kortyna ◽  
M. Keil ◽  
B. Schellhaaβ ◽  
K. Bergmann
Keyword(s):  
Low Energy ◽  
Negative Ion ◽  
Dissociative Attachment ◽  
Ion Formation ◽  
Low Energy Electrons

Possibility of high-resolution ptychographic iterative imaging with low energy electrons: dynamical calculations

Microscopy ◽  
2014 ◽  
Vol 64 (2) ◽  
pp. 105-110 ◽  
Author(s):  
Ling Wang ◽  
Cheng Liu ◽  
John M. Rodenburg
Keyword(s):  
High Resolution ◽  
Low Energy ◽  
Low Energy Electrons

Ab InitioStudy of Dissociative Attachment of Low-Energy Electrons toF2

1981 ◽  
Vol 46 (14) ◽  
pp. 918-922 ◽  
Author(s):  
A. U. Hazi ◽  
A. E. Orel ◽  
T. N. Rescigno
Keyword(s):  
Low Energy ◽  
Dissociative Attachment ◽  
Low Energy Electrons
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