Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes

2017 ◽  
Vol 110 (14) ◽  
pp. 143509 ◽  
Author(s):  
Andrzej Taube ◽  
Mariusz Sochacki ◽  
Norbert Kwietniewski ◽  
Aleksander Werbowy ◽  
Sylwia Gierałtowska ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Heterojunction Diodes

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

2001 ◽  
Vol 693 ◽  
Author(s):  
J. Kim ◽  
B. Luo ◽  
R. Mehandru ◽  
F. Ren ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Space Charge ◽  
Plasma Treatment ◽  
Space Charge Region ◽  
Forward Direction ◽  
Deuterium Plasma ◽  
Light Emitting ◽  
Plasma Treatments ◽  
Forward Current ◽  
Heterojunction Diodes

AbstractEffects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Electrical properties of doped polypyrrole/silicon heterojunction diodes and their response to NOx gas

1997 ◽  
Vol 292 (1-2) ◽  
pp. 293-298 ◽  
Author(s):  
Le T.T. Tuyen ◽  
K. Potje-Kamloth ◽  
H.-D. Liess
Keyword(s):  
Electrical Properties ◽  
Heterojunction Diodes

Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

2013 ◽  
Vol 102 (24) ◽  
pp. 242101 ◽  
Author(s):  
Steven Chuang ◽  
Rehan Kapadia ◽  
Hui Fang ◽  
Ting Chia Chang ◽  
Wen-Chun Yen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Van Der Waals ◽  
Heterojunction Diodes

Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

2007 ◽  
Vol 556-557 ◽  
pp. 1039-1042 ◽  
Author(s):  
Koichi Amari ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Electrical Properties ◽  
Electronic Properties ◽  
Electron Injection ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
View Point ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Order Of Magnitude ◽  
Heterojunction Diodes

The electrical properties of n+-GaN/p+-SiC heterojunction diodes have been investigated by varying the acceptor concentration of p+-SiC epilayers (Na) and polytype of SiC (4H- and 6H-SiC). The current-voltage (I-V) characteristics of diodes with Na ~ 1x1019 cm-3 were dominated by tunneling-assisted current. The diodes with Na ~ 1x1018 cm-3 exhibit excellent characteristics and 6H-SiC may be a better choice from a view point of electron injection into p-SiC base. Compared to previous investigations (Na<1016cm-3), we could obtain good rectification with p-SiC doped to two-order-of-magnitude higher acceptor concentration.

Optical and electrical properties of n-ZnAgAuO/p-Si heterojunction diodes

2016 ◽  
Vol 28 (7) ◽  
pp. 5440-5445 ◽  
Author(s):  
R. Krithikadevi ◽  
M. Arulmozhi ◽  
C. Siva ◽  
B. Balraj ◽  
G. Mohan Kumar
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Heterojunction Diodes

scholarly journals Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes

AIP Advances ◽  
2013 ◽  
Vol 3 (9) ◽  
pp. 092126 ◽  
Author(s):  
Mohit Kumar ◽  
Aloke Kanjilal ◽  
Tapobrata Som
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Heterojunction Diodes
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