Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

2013 ◽  
Vol 102 (24) ◽  
pp. 242101 ◽  
Author(s):  
Steven Chuang ◽  
Rehan Kapadia ◽  
Hui Fang ◽  
Ting Chia Chang ◽  
Wen-Chun Yen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Van Der Waals ◽  
Heterojunction Diodes

scholarly journals Self-Aligned van der Waals Heterojunction Diodes and Transistors

Nano Letters ◽  
2018 ◽  
Vol 18 (2) ◽  
pp. 1421-1427 ◽  
Author(s):  
Vinod K. Sangwan ◽  
Megan E. Beck ◽  
Alex Henning ◽  
Jiajia Luo ◽  
Hadallia Bergeron ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Heterojunction Diodes

Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes

2017 ◽  
Vol 110 (14) ◽  
pp. 143509 ◽  
Author(s):  
Andrzej Taube ◽  
Mariusz Sochacki ◽  
Norbert Kwietniewski ◽  
Aleksander Werbowy ◽  
Sylwia Gierałtowska ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Heterojunction Diodes

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

2001 ◽  
Vol 693 ◽  
Author(s):  
J. Kim ◽  
B. Luo ◽  
R. Mehandru ◽  
F. Ren ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Space Charge ◽  
Plasma Treatment ◽  
Space Charge Region ◽  
Forward Direction ◽  
Deuterium Plasma ◽  
Light Emitting ◽  
Plasma Treatments ◽  
Forward Current ◽  
Heterojunction Diodes

AbstractEffects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Electrical properties of doped polypyrrole/silicon heterojunction diodes and their response to NOx gas

1997 ◽  
Vol 292 (1-2) ◽  
pp. 293-298 ◽  
Author(s):  
Le T.T. Tuyen ◽  
K. Potje-Kamloth ◽  
H.-D. Liess
Keyword(s):  
Electrical Properties ◽  
Heterojunction Diodes

van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS2

2018 ◽  
Vol 20 (47) ◽  
pp. 29790-29797 ◽  
Author(s):  
Hyun Goo Ji ◽  
Mina Maruyama ◽  
Adha Sukma Aji ◽  
Susumu Okada ◽  
Kazunari Matsuda ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Growth ◽  
Sapphire Substrate ◽  
Van Der Waals ◽  
Van Der Waals Interaction ◽  
Optical And Electrical Properties

Influence of sapphire substrate on the epitaxial growth of WS2 was investigated in terms of the optical and electrical properties.

Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit

ACS Nano ◽  
2022 ◽  
Author(s):  
Jakub Jadwiszczak ◽  
Jeffrey Sherman ◽  
David Lynall ◽  
Yang Liu ◽  
Boyan Penkov ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Atomic Limit ◽  
Heterojunction Diodes

scholarly journals Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

APL Materials ◽  
2017 ◽  
Vol 5 (2) ◽  
pp. 026107 ◽  
Author(s):  
Stefano Cecchi ◽  
Eugenio Zallo ◽  
Jamo Momand ◽  
Ruining Wang ◽  
Bart J. Kooi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Van Der Waals ◽  
Structural And Electrical Properties
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