Return of target material ions leads to a reduced hysteresis in reactive high power impulse magnetron sputtering: Experiment

2017 ◽  
Vol 121 (17) ◽  
pp. 171911 ◽  
Author(s):  
Jiří Čapek ◽  
Stanislav Kadlec
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Target Material

scholarly journals Deposition of 3YSZ-TiC PVD Coatings with High-Power Impulse Magnetron Sputtering (HiPIMS)

2021 ◽  
Vol 11 (6) ◽  
pp. 2753
Author(s):  
Bastian Gaedike ◽  
Svenja Guth ◽  
Frank Kern ◽  
Andreas Killinger ◽  
Rainer Gadow
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Physical Vapor Deposition ◽  
Target Material ◽  
Electrical Insulation ◽  
Electrically Conductive ◽  
New Approach ◽  
Conductive Oxide ◽  
Short Circuits ◽  
Carbide Ceramics

Optimized coating adhesion and strength are the advantages of high-power impulse magnetron sputtering (HiPIMS) as an innovative physical vapor deposition (PVD) process. When depositing electrically non-conductive oxide ceramics as coatings with HiPIMS without dual magnetron sputtering (DMS) or mid-frequency (MF) sputtering, the growing coating leads to increasing electrical insulation of the anode. As a consequence, short circuits occur, and the process breaks down. This phenomenon is also known as the disappearing anode effect. In this study, a new approach involving adding electrically conductive carbide ceramics was tried to prevent the electrical insulation of the anode and thereby guarantee process stability. Yttria-stabilized zirconia (3YSZ) with 30 vol.% titanium carbide (TiC) targets are used in a non-reactive HiPIMS process. The main focus of this study is a parameter inquisition. Different HiPIMS parameters and their impact on the measured current at the substrate table are analyzed. This study shows the successful use of electrically conductive carbide ceramics in a non-conductive oxide as the target material. In addition, we discuss the observed high table currents with a low inert gas mix, where the process was not expected to be stable.

Modeling the high power impulse magnetron sputtering discharge

2020 ◽  
pp. 159-221 ◽  
Author(s):  
Tiberiu Minea ◽  
Tomáš Kozák ◽  
Claudiu Costin ◽  
Jon Tomas Gudmundsson ◽  
Daniel Lundin
Keyword(s):  
Magnetron Sputtering ◽  
High Power

Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Pulsed Magnetron

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

On how to measure the probabilities of target atom ionization and target ion back-attraction in high-power impulse magnetron sputtering

2021 ◽  
Vol 129 (3) ◽  
pp. 033303
Author(s):  
Martin Rudolph ◽  
Hamidreza Hajihoseini ◽  
Michael A. Raadu ◽  
Jon Tomas Gudmundsson ◽  
Nils Brenning ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Target Atom ◽  
Atom Ionization
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