Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission

2017 ◽  
Vol 110 (7) ◽  
pp. 072103
Author(s):  
M. Lenz ◽  
C. Matheisen ◽  
M. Nagel ◽  
J. Knoch
Keyword(s):  
Time Domain ◽  
Simultaneous Measurement ◽  
Doping Concentration ◽  
Carrier Lifetime

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime

2010 ◽  
Vol 49 (12) ◽  
pp. 121201 ◽  
Author(s):  
Dalia Elfiky ◽  
Masafumi Yamaguchi ◽  
Takuo Sasaki ◽  
Tatsuya Takamoto ◽  
Chiharu Morioka ◽  
...  
Keyword(s):  
Radiation Resistance ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Base Doping

scholarly journals Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy

2016 ◽  
Vol 24 (23) ◽  
pp. 26175 ◽  
Author(s):  
Valynn Katrine Mag-usara ◽  
Stefan Funkner ◽  
Gudrun Niehues ◽  
Elizabeth Ann Prieto ◽  
Maria Herminia Balgos ◽  
...  
Keyword(s):  
Low Temperature ◽  
Time Domain ◽  
Emission Spectroscopy ◽  
Carrier Lifetime ◽  
Optical Pump ◽  
Low Temperature Grown Gaas

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers

2019 ◽  
Vol 963 ◽  
pp. 109-113
Author(s):  
Birgit Kallinger ◽  
Jürgen Erlekampf ◽  
Katharina Rosshirt ◽  
Patrick Berwian ◽  
Matthias Stockmeier ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Specific Resistivity ◽  
Dislocation Densities ◽  
Large Spread ◽  
Substrate Properties ◽  
Influence Of Substrate ◽  
Homoepitaxial Layers

Two fully loaded epitaxial growth runs with 16 wafers in total were conducted in the AIXTRON G5 WW reactor in order to keep epigrowth conditions constant. The wafers were selected with a large spread of specific resistivity and dislocation densities. The resulting epilayers showed very good intra-wafer homogeneities as well as excellent wafer-to-wafer and run-to-run reproducibility with regard to epilayer thickness and doping concentration, point defect concentrations of Z1/2 and EH6/7 and the resulting Shockley-Read-Hall carrier lifetime. We found that the dislocation densities of the underlying substrates are influencing the stacking fault densities of the epilayers, which then vary between 0.1 and 10 cm-2. A substrate effect on the effective minority carrier lifetime was found.

Er-Doped GaAs for High Speed Photoconductor Applications

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya ◽  
S. Williamson
Keyword(s):  
Optical Communications ◽  
Potential Application ◽  
High Speed ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Light Sources ◽  
Erbium Doped ◽  
Er Doped

ABSTRACTThe observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.

scholarly journals Simultaneous measurement of time-domain fNIRS and physiological signals during a cognitive task

2011 ◽  
Author(s):  
A. Jelzow ◽  
I. Tachtsidis ◽  
E. Kirilina ◽  
M. Niessing ◽  
R. Brühl ◽  
...  
Keyword(s):  
Time Domain ◽  
Simultaneous Measurement ◽  
Cognitive Task ◽  
Physiological Signals

Suppressing photoexcited electron–hole recombination in MoSe2/WSe2 lateral heterostructures via interface-coupled state engineering: a time-domain ab initio study

2020 ◽  
Vol 8 (39) ◽  
pp. 20621-20628
Author(s):  
Zhaobo Zhou ◽  
Yehui Zhang ◽  
Xiwen Zhang ◽  
Xianghong Niu ◽  
Guangfen Wu ◽  
...  
Keyword(s):  
Time Domain ◽  
Carrier Lifetime ◽  
Vital Role ◽  
Two Dimensional ◽  
Ab Initio Study ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Photoexcited Carrier ◽  
Hole Recombination ◽  
Lateral Heterostructure

Interface-coupled states play a vital role in photoexcited carrier lifetime of two-dimensional lateral heterostructure-based photovoltaic and photoelectric devices.

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