Suppressing photoexcited electron–hole recombination in MoSe2/WSe2 lateral heterostructures via interface-coupled state engineering: a time-domain ab initio study

2020 ◽  
Vol 8 (39) ◽  
pp. 20621-20628
Author(s):  
Zhaobo Zhou ◽  
Yehui Zhang ◽  
Xiwen Zhang ◽  
Xianghong Niu ◽  
Guangfen Wu ◽  
...  
Keyword(s):  
Time Domain ◽  
Carrier Lifetime ◽  
Vital Role ◽  
Two Dimensional ◽  
Ab Initio Study ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Photoexcited Carrier ◽  
Hole Recombination ◽  
Lateral Heterostructure

Interface-coupled states play a vital role in photoexcited carrier lifetime of two-dimensional lateral heterostructure-based photovoltaic and photoelectric devices.

Weak temperature-dependent hole injection and electron–hole recombination at the CH3NH3PbI3/NiO heterojunction: a time-domain ab initio study

2020 ◽  
Vol 8 (2) ◽  
pp. 607-615 ◽  
Author(s):  
Jinlu He ◽  
Wei-Hai Fang ◽  
Run Long
Keyword(s):  
Charge Carrier ◽  
Ab Initio ◽  
Time Domain ◽  
Carrier Dynamics ◽  
Hole Injection ◽  
Ab Initio Study ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Charge Carrier Dynamics ◽  
Hole Recombination

Weak temperature-dependent photoexcitation charge carrier dynamics in the CH3NH3PbI3/NiO heterojunction.

scholarly journals Structural rigidity accelerates quantum decoherence and extends carrier lifetime in porphyrin nanoballs: a time domain atomistic simulation

2020 ◽  
Vol 2 (4) ◽  
pp. 1502-1511
Author(s):  
Ritabrata Sarkar ◽  
Md Habib ◽  
Moumita Kar ◽  
Anup Pramanik ◽  
Sougata Pal ◽  
...  
Keyword(s):  
Time Domain ◽  
Atomistic Simulation ◽  
Quantum Coherence ◽  
Carrier Lifetime ◽  
Quantum Decoherence ◽  
Phonon Coupling ◽  
Electron Hole ◽  
Structural Rigidity ◽  
Electron Phonon Coupling ◽  
Hole Recombination

Structural rigidity assists to weaken the NA electron–phonon coupling, shorten the quantum coherence and thus suppress the dynamics of electron–hole recombination.

scholarly journals Unravelling the effects of oxidation state of interstitial iodine and oxygen passivation on charge trapping and recombination in CH3NH3PbI3 perovskite: a time-domain ab initio study

2019 ◽  
Vol 10 (43) ◽  
pp. 10079-10088 ◽  
Author(s):  
Jinlu He ◽  
Wei-Hai Fang ◽  
Run Long
Keyword(s):  
Ab Initio ◽  
Oxidation State ◽  
Time Domain ◽  
Charge Trapping ◽  
Ab Initio Study ◽  
Electron Hole ◽  
Hole Recombination

The oxidation state of interstitial iodine and oxygen passivation control the electron–hole recombination in CH3NH3PbI3 perovskite.

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