scholarly journals An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

2017 ◽  
Vol 110 (3) ◽  
pp. 033102 ◽  
Author(s):  
Hui Xu ◽  
Haitao Ye ◽  
David Coathup ◽  
Ivona Z. Mitrovic ◽  
Ayendra D. Weerakkody ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Diamond Films ◽  
Type Conductivity ◽  
Oxygen Ion ◽  
Ultrananocrystalline Diamond ◽  
P Type ◽  
Ion Implanted

Attempts to p-Dope Ultrananocrystalline Diamond Films in a Hot Filament Reactor

2006 ◽  
Vol 956 ◽  
Author(s):  
Paul William May ◽  
Matthew Hannaway
Keyword(s):  
Vapour Deposition ◽  
Film Growth ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Grain Sizes ◽  
Ultrananocrystalline Diamond ◽  
The Individual ◽  
P Type ◽  
Hot Filament

ABSTRACTUltrananocrystalline diamond (UNCD) films have been deposited using hot filament chemical vapour deposition using Ar/CH4/H2 gas mixtures plus additions of B2H6 in an attempt to make p-type semiconducting films. With increasing additions of B2H6 from 0 to 40,000 ppm with respect to C, the film growth rate was found to decrease substantially, whilst the individual grain sizes increased from nm to μm. With 40,000 ppm of B2H6, crystals of boric oxide were found on the substrate surface, which slowly hydrolysed to boric acid on exposure to air. These results are rationalised using a model for UNCD growth based on competition for surface radical sites between CH3 and C atoms.

scholarly journals Transparent Conductive p-Type Cuprous Oxide Films in Vis-NIR Region Prepared by Ion-Beam Assisted DC Reactive Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 473 ◽  
Author(s):  
Ming-Jiang Dai ◽  
Song-Sheng Lin ◽  
Qian Shi ◽  
Fen Liu ◽  
Wan-Xia Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Ion Beam ◽  
Hole Transport ◽  
Infrared Light ◽  
Interstitial Oxygen ◽  
Current Increase ◽  
Type Conductivity ◽  
Oxygen Ion ◽  
Cu2o Films ◽  
P Type

Cu2O thin film has been widely studied due to its intrinsic p-type conductivity. It can be used as p-type transparent conductive electrode or hole transport layer in various potential applications. However, its intrinsic p-type conductivity is very limited, which needs to be optimized by introducing acceptor defects. In this work, the electrical properties of the Cu2O films was improved through introducing interstitial oxygen in the films those were deposited via direct current sputtering assisted by oxygen ion beam. The results show that with oxygen ion beam current increase, the carrier concentration effectively improves. However, with more interstitial oxygen introduced, the film’s crystallinity significantly reduces, as well as the carrier mobility decreases. Meanwhile, all of the Cu2O films present moderate transmittance in the visible region (400–800 nm), but ideal transmittance in the near infrared (NIR) light region (800–2500 nm). When compared with the strong reflection of the n-type transparent conductive film to the near infrared light, the Cu2O film is transparent conductive in NIR region, which expands its application in the fabrication of NIR electrical devices.

Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films

2008 ◽  
Vol 103 (4) ◽  
pp. 043720 ◽  
Author(s):  
P. T. Joseph ◽  
N. H. Tai ◽  
Chi-Young Lee ◽  
H. Niu ◽  
W. F. Pong ◽  
...  
Keyword(s):  
Field Emission ◽  
Diamond Films ◽  
Ultrananocrystalline Diamond ◽  
Emission Enhancement ◽  
Nitrogen Ion ◽  
Ion Implanted
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