n-type conductivity and phase transition in ultrananocrystalline diamond films by oxygen ion implantation and annealing

2011 ◽  
Vol 109 (5) ◽  
pp. 053524 ◽  
Author(s):  
X. J. Hu ◽  
J. S. Ye ◽  
H. J. Liu ◽  
Y. G. Shen ◽  
X. H. Chen ◽  
...  
Keyword(s):  
Phase Transition ◽  
Ion Implantation ◽  
Diamond Films ◽  
Type Conductivity ◽  
Oxygen Ion ◽  
Ultrananocrystalline Diamond ◽  
Oxygen Ion Implantation

scholarly journals An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

2017 ◽  
Vol 110 (3) ◽  
pp. 033102 ◽  
Author(s):  
Hui Xu ◽  
Haitao Ye ◽  
David Coathup ◽  
Ivona Z. Mitrovic ◽  
Ayendra D. Weerakkody ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Diamond Films ◽  
Type Conductivity ◽  
Oxygen Ion ◽  
Ultrananocrystalline Diamond ◽  
P Type ◽  
Ion Implanted

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Improved surface corrosion resistance of WE43 magnesium alloy by dual titanium and oxygen ion implantation

2013 ◽  
Vol 529 ◽  
pp. 407-411 ◽  
Author(s):  
Ying Zhao ◽  
Guosong Wu ◽  
Qiuyuan Lu ◽  
Jun Wu ◽  
Ruizhen Xu ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Magnesium Alloy ◽  
Ion Implantation ◽  
Surface Corrosion ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
We43 Magnesium Alloy
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