scholarly journals Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

2016 ◽  
Vol 120 (19) ◽  
pp. 193103 ◽  
Author(s):  
A. Y. Liu ◽  
C. Sun ◽  
V. P. Markevich ◽  
A. R. Peaker ◽  
J. D. Murphy ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapour ◽  
Silicon Nitride Films

Diffusion of hydrogen in low pressure chemical vapour deposited silicon nitride films

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1055-1056 ◽  
Author(s):  
W.M. Arnold Bik ◽  
R.N.H. Linssen ◽  
F.H.P.M. Habraken ◽  
W.F. van der Weg ◽  
A.E.T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

Properties of Ultrathin Amorphous Silicon Nitride Films on III V Semiconductors

1992 ◽  
Vol 284 ◽  
Author(s):  
L.J. Huang ◽  
R. W. M. Kwok ◽  
W. M. Lau ◽  
H. T. Tang ◽  
W. N. Lennard ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Positron Annihilation Spectroscopy ◽  
Air Exposure ◽  
Near Surface ◽  
Oxygen Penetration ◽  
Silicon Nitride Films

ABSTRACTProperties of ultrathin (— lOnm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si (100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500° C also led to changes of the electrical properties in the films but not the substrate.

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