scholarly journals Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

2016 ◽  
Vol 109 (19) ◽  
pp. 193111 ◽  
Author(s):  
Feng Wang ◽  
Lei Yin ◽  
Zhenxing Wang ◽  
Kai Xu ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Van Der Waals Heterostructures

Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for Hydrogen Evolution

2021 ◽  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Hydrogen Evolution ◽  
High Performance ◽  
Van Der Waals ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Van Der Waals Heterostructures ◽  
Composite Photocatalysts

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...

Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices

ACS Nano ◽  
2019 ◽  
Vol 13 (12) ◽  
pp. 14519-14528 ◽  
Author(s):  
Yao Wen ◽  
Peng He ◽  
Qisheng Wang ◽  
Yuyu Yao ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Van Der Waals Heterostructures

scholarly journals Effect of an external electric field on the electronic properties of SnS2/PbI2 van der Waals heterostructures

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25582-25588 ◽  
Author(s):  
Yaqiang Ma ◽  
Xu Zhao ◽  
Mengmeng Niu ◽  
Xianqi Dai ◽  
Wei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Future Development ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Control Technology ◽  
Van Der Waals Heterostructures ◽  
Advanced Control ◽  
The Future

The future development of optoelectronic devices will require an advanced control technology in electronic properties, for example by an external electric field (Efield).

scholarly journals Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan
Keyword(s):  
Optical Properties ◽  
Absorption Coefficient ◽  
High Performance ◽  
Density Functional ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties ◽  
Wide Range ◽  
Direct Band

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

scholarly journals Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor

2019 ◽  
Vol 114 (10) ◽  
pp. 103501 ◽  
Author(s):  
Ningning Li ◽  
Yao Wen ◽  
Ruiqing Cheng ◽  
Lei Yin ◽  
Feng Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Strongly Coupled

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

2018 ◽  
Vol 6 (27) ◽  
pp. 7201-7206 ◽  
Author(s):  
Jimin Shang ◽  
Longfei Pan ◽  
Xiaoting Wang ◽  
Jingbo Li ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Normal Strain ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Typical Type ◽  
Direct Band

2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.

scholarly journals A roadmap for interlayer excitons

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Kai-Qiang Lin
Keyword(s):  
Momentum Space ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Real Space ◽  
Electron Hole ◽  
Van Der Waals Heterostructures ◽  
Exciton Condensation ◽  
Excitonic Properties

AbstractInterlayer excitons in van der Waals heterostructures have tunable electron–hole separation in both real space and momentum space, enabling unprecedented control over excitonic properties to be exploited in a wide array of future applications ranging from exciton condensation to valleytronic and optoelectronic devices.

scholarly journals Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Gang Xu ◽  
Yelu He
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
High Performance ◽  
Van Der Waals ◽  
Type I ◽  
Normal Strain ◽  
Van Der Waals Heterostructures ◽  
Electronic Band ◽  
Fundamental Research ◽  
Metal Phase Transition

In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic structure of silicane/SnSe2 vdWhs in the response to an externally applied electric field and a normal strain. The results show that the silicane/SnSe2 vdWh acts as an indirect semiconductor when it is subjected to an applied electric field between −1 and 0.1 V/Å and becomes a metal in the 0.2 to 1 V/Å range. Significantly, the electronic band alignments of the silicane/SnSe2 vdWhs are modified from a type-II to a type-I when a field of −0.7 V/Å is applied. Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. Our results indicate that the silicane/SnSe2 vdWhs have the potential for applications in novel high-performance optoelectronic devices.

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