scholarly journals Effect of annealing time on memristive behavior of sol-gel spincoated ZnO-based memristive device

2016 ◽  
Author(s):  
N. A. A. Shaari ◽  
N. S. M. Sauki ◽  
S. H. Herman
Keyword(s):  
Annealing Time ◽  
Sol Gel ◽  
Memristive Device ◽  
Memristive Behavior

scholarly journals Effects of annealing time on the structure and optical properties of ZnAl2O4/ZnO prepared via citrate sol-gel process

2018 ◽  
Vol 14 ◽  
pp. 294-301 ◽  
Author(s):  
Setumo Victor Motloung ◽  
Pushpa Kumari ◽  
Lehlohonolo Fortune Koao ◽  
Tshwafo Elias Motaung ◽  
Thulani Thokozani Hlatshwayo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Annealing Time ◽  
Sol Gel ◽  
Sol Gel Process

Indium-Sensitized UV Photocatalysts Made from Alkali Titanate Microfibers

2009 ◽  
Vol 620-622 ◽  
pp. 651-654
Author(s):  
Leticia M. Torres-Martínez ◽  
Cecilia Sánchez-Trinidad ◽  
Vicente Rodríguez-González ◽  
Ricardo Gómez
Keyword(s):  
Heat Treatment ◽  
Annealing Time ◽  
Uv Light ◽  
Sol Gel ◽  
Dichlorophenoxyacetic Acid ◽  
Sem Images ◽  
Uv Light Irradiation ◽  
Heat Treated ◽  
Munk Function ◽  
Sol Gel Process

Indium-alkali microfibers doped ceramic were prepared by the sol-gel process. The gels preparation samples, were heat treated at 700°C for different length of time. The products were characterized by means of XRD, SEM-EDS and UV–Vis-DRS. The XRD showed the formation of the Na2Ti6O13 phase whose crystallinity depends on the annealing time. The band gap calculated from the UV–Vis Kubelka-Munk function shows very similar values (3.53-3.55 eV). The SEM images of the indium-alkali titanates show microfiber clumps morphologies of about 5 µm, and the EDS spectra show that In2O3 is on the Na2Ti6O13 surface. The results of the evaluation of the In-Na2Ti6O13 semiconductors in the 2, 4-dichlorophenoxyacetic acid (2, 4-D) photodecomposition under UV light irradiation, show that the photoactivity depends on the time of heat treatment of the samples.

Optical Study of PbTiO3 Thin Films Grown by Sol-Gel Technique

1994 ◽  
Vol 361 ◽  
Author(s):  
E. Ching-Prado ◽  
R.W. Tao ◽  
R.S. Katiyar ◽  
A.S. Bhalla
Keyword(s):  
Thin Films ◽  
Annealing Time ◽  
Sol Gel ◽  
Low Frequency ◽  
Frequency Region ◽  
Film Stress ◽  
Optical Study ◽  
High Background ◽  
Gel Technique ◽  
Homogeneous Film

ABSTRACTThin films of PbTiO3 were prepared by sol-gel method on platinum-coated-Si and Al2O3 and annealed at 600°C. The annealing time of the films, deposited on Si, were 6 and 12 hours, respectively. Micro-Raman spectra show high background in the low frequency region and the bands are broader with respect to the single crystal work, which indicates the polycrystalline nature of the samples. The film annealed for 12 hours showed more pronounced peaks in the spectra when compared to the film annealed for 6 hours. Micro-Raman measurements on different spots in the film indicate that the PT film on platinum-coated silicon substrate is highly inhomogeneous. In the case of PT/Al2O3 such studies show a homogeneous film. The frequencies of most of the modes are decreased, which is associated to grains under stress. The nature of the stress is discussed. Although film stress may not be homogeneous, a stress value around 1.2 GPa is estimated from Raman data. XRD and SEM techniques were used for structural characterization.

Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel

2011 ◽  
Vol 277 ◽  
pp. 1-10 ◽  
Author(s):  
D. Fasquelle ◽  
M. Mascot ◽  
J.C. Carru
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Annealing Time ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Annealing Conditions ◽  
Average Size

This paper reports a study of Ba0.9Sr0.1TiO3films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr= 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

Effect of Structural Deficiencies on Bi-Ferroic Behaviors of Lead-Free Bi0.5 Na0.40K0.10TiO3 Films

2021 ◽  
Vol 21 (11) ◽  
pp. 5653-5658
Author(s):  
Ngo Due Quan ◽  
Nguyen Due Minh ◽  
Hoang Viet Hung
Keyword(s):  
Magnetic Properties ◽  
Annealing Time ◽  
Spin Coating ◽  
Applied Electric Field ◽  
Remnant Polarization ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Lead Free ◽  
Ferroelectric Films ◽  
Si Substrates

Lead-free Bi0.5Na0.4K0.1TiO3 (BNKT) ferroelectric films on Pt/TI/SIO2/Si substrates were prepared via a sol-gel spin coating routine. The microstructures and multiferroic behaviors of the films were examined intimately as a function of the annealing time. A rise of annealing time enhanced the crystallization of the films via the perovskite structure. The multiferroic behavior, including simultaneously the magnetic and ferroelectric orders, was observed altogether the films. When the annealing time rose, ferroelectric and magnetic properties were found significantly increased. The remnant polarization (Pr), also as maximum polarization (Pm) respectively increased to the very best values of 11.5 µC/cm2 and 40.0 µC/cm2 under an applied electric field of 500 kV/cm. The saturated magnetization (Ms) of films increased to 2.3 emu/cm3 for the annealing time of 60 minutes. Oxygen vacancies, originating from the evaporation of metal ions during annealing at high temperatures are attributed to the explanation for ferromagnetism within the BNKT films.

The effect of annealing time on tungsten-doped vanadium dioxide by using sol-gel spin coating method

2020 ◽  
Author(s):  
H. Hashim ◽  
A. S. Mohamed ◽  
M. Y. Ibrahim ◽  
S. S. Shariffudin ◽  
M. S. P. Sarah
Keyword(s):  
Annealing Time ◽  
Vanadium Dioxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Method ◽  
Coating Method

Formation of a Co3O4 Top Layer in SiO2 Cobalt Containing Coatings Sol-gel Obtained

2001 ◽  
Vol 672 ◽  
Author(s):  
H. Tototzintle-Huitle ◽  
A. Ramos-Mendoza ◽  
A. Mendoza-Galván ◽  
J. González-Hernández ◽  
B. S. Chao
Keyword(s):  
Cobalt Oxide ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Oxide Thickness ◽  
X Ray ◽  
Temperature Range ◽  
Glass Substrates ◽  
Diffusion Controlled ◽  
Diffraction Patterns

ABSTRACTSiO2 coatings containing cobalt were prepared on glass substrates using the sol-gel method. It has been found that in coatings with a Si to Co ratio of 1.3, a layer of Co3O4 is formed at the free surface of the coating upon thermal annealings in air. The properties of the coatings were studied using optical, x-ray and Auger depth profile measurements. The thermal annealings in the temperature range of 300 to 500 oC, in steps of 50 oC, were performed for 10 min. Some samples were subjected to an isothermal annealing at 400 °C for different times from 10 to 210 min. From the x-ray diffraction patterns the cubic spinel structure of Co3O4 was detected after the thermal treatments. The optical reflection and transmission spectra for each annealing temperature and annealing time, are described with an air-Co3O4-SiO2:Co2+-substrate system. From this, the cobalt oxide thickness was obtained as a function of the annealing temperature and annealing time. From the Arrhenius plots, in the temperature range studied, it was found that the activation energy for the growth of the cobalt oxide layer is 0.41 eV. The layer thickness follows a parabolic behavior with time, which suggests a diffusion-controlled process. The Auger depth profiles obtained from a sample annealed at 500 °C confirm the optical model used.

scholarly journals Memristive behavior of the SnO2/TiO2 interface deposited by sol–gel

2017 ◽  
Vol 410 ◽  
pp. 278-281 ◽  
Author(s):  
Miguel H. Boratto ◽  
Roberto A. Ramos ◽  
Mirko Congiu ◽  
Carlos F.O. Graeff ◽  
Luis V.A. Scalvi
Keyword(s):  
Sol Gel ◽  
Memristive Behavior
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