Optical Study of PbTiO3 Thin Films Grown by Sol-Gel Technique

1994 ◽  
Vol 361 ◽  
Author(s):  
E. Ching-Prado ◽  
R.W. Tao ◽  
R.S. Katiyar ◽  
A.S. Bhalla

ABSTRACTThin films of PbTiO3 were prepared by sol-gel method on platinum-coated-Si and Al2O3 and annealed at 600°C. The annealing time of the films, deposited on Si, were 6 and 12 hours, respectively. Micro-Raman spectra show high background in the low frequency region and the bands are broader with respect to the single crystal work, which indicates the polycrystalline nature of the samples. The film annealed for 12 hours showed more pronounced peaks in the spectra when compared to the film annealed for 6 hours. Micro-Raman measurements on different spots in the film indicate that the PT film on platinum-coated silicon substrate is highly inhomogeneous. In the case of PT/Al2O3 such studies show a homogeneous film. The frequencies of most of the modes are decreased, which is associated to grains under stress. The nature of the stress is discussed. Although film stress may not be homogeneous, a stress value around 1.2 GPa is estimated from Raman data. XRD and SEM techniques were used for structural characterization.

1994 ◽  
Vol 343 ◽  
Author(s):  
E. Ching-Prado ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
S. B. Majumder ◽  
D. C. Agrawal

ABSTRACTA PbTiO3 thin film prepared on silicon substrate by sol-gel technique has been studied by micro-Raman spectroscopy. The spectra, in comparison to the single crystal work, show high background in the low frequency region and Raman lines are broader, thus revealing the polycrystalline nature of the film. The frequencies of the Raman bands in the film are clearly shifted to lower frequencies compared to the corresponding ones in the single crystal or powder forms. This phenomenon is similar to the hydrostatic pressure effect on the Raman lines of PbTiO3 single crystal. The film, therefore, has grains under stress. This stress is caused by non-equilibrium defects and diffusion at the interface. Measurements at different film positions showed variation in the frequency and width of the Raman bands which are associated with the stress and grain size inhomogeneities. The measured shift in the Raman frequencies suggest grain sizes ≤l μm. XRD indicates grain size around 22 nm.


2017 ◽  
Author(s):  
Siti Noraini Abu Bakar ◽  
Huda Abdullah ◽  
Kamisah Mohamad Mahbor

2014 ◽  
Vol 50 (8) ◽  
pp. 1-4 ◽  
Author(s):  
Robina Ashraf ◽  
Saira Riaz ◽  
Mahwish Bashir ◽  
Usman Khan ◽  
Shahzad Naseem

2008 ◽  
Vol 51 (11) ◽  
pp. 1843-1849 ◽  
Author(s):  
MeiYa Li ◽  
Ling Pei ◽  
Jun Liu ◽  
BenFang Yu ◽  
DongYun Guo ◽  
...  
Keyword(s):  
Sol Gel ◽  

2009 ◽  
Vol 518 (4) ◽  
pp. 1114-1118 ◽  
Author(s):  
M.A. Flores Mendoza ◽  
R. Castanedo Pérez ◽  
G. Torres Delgado ◽  
O. Zelaya Angel

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.


2010 ◽  
Vol 30 (2) ◽  
pp. 271-275 ◽  
Author(s):  
Yuhua Zhang ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Sol Gel ◽  

2008 ◽  
Vol 39 (11) ◽  
pp. 1333-1335 ◽  
Author(s):  
Fernando Gordillo Delgado ◽  
Katherine Villa Gómez ◽  
Claudia Mejía Morales

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.


2018 ◽  
Vol 08 (04) ◽  
pp. 89-106 ◽  
Author(s):  
Amel Adjimi ◽  
Meryem Lamri Zeggar ◽  
Nadhir Attaf ◽  
Mohammed Salah Aida

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