scholarly journals Estimation of steady-state leakage current in polycrystalline PZT thin films

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095025 ◽  
Author(s):  
Yury Podgorny ◽  
Konstantin Vorotilov ◽  
Alexander Sigov
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Leakage Current ◽  
Pzt Thin Films

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Highly tunable Mn-doped PZT thin films for integrated RF devices

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 002095-002127
Author(s):  
Warda Benhadjala ◽  
Florence Sonnerat ◽  
Jennifer Guillaume ◽  
Christel Dieppedale ◽  
Philippe Renaux ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bias Voltage ◽  
Low Noise ◽  
Pzt Thin Films ◽  
Wide Range ◽  
Metal Insulator Metal ◽  
Dc Bias ◽  
High Dielectric ◽  
Mn Doped

Modern RF systems have triggered an important and urgent demand for inexpensive voltage controlled capacitors used for a wide range of applications such as tunable antennas or low-noise voltage-controlled oscillators (VCO). Ferroelectric materials have received considerable interest for electrically tunable dielectrics due to their high dielectric constant and large dielectric nonlinearity under dc bias field. Lead zirconate titanate (PZT) ceramics which have been under intense investigation for various industrial domains including micro-electro-mechanical systems (MEMS), non-volatile memories, and high-k capacitors, are especially well-known candidate materials due to their unequalled ferroelectric properties and stability in device operating ranges. However, reported voltage tunability of PZT films is relatively low (~35%@4GHz) and remains insufficient for microwave tunable devices. Therefore, much attention has been focused on the PZT modification by adding a small amount of dopants. Shao et al., studied strontium-doped PZT (PSZT) thin films and achieved a tunability of 48% @1MHz. More recently, Hu et al. reported a tunability of 65%@10kHz for lanthanum-modified PZT (PLZT) films. In the presented study, effect of manganese (Mn) doping on electrical properties of PZT (PMZT) thin films has been investigated. Metal/insulator/metal (MIM) capacitors using PZT-based thin films and ruthenium (Ru) top electrodes were processed on platinized (Pt) silicon wafers by a sol gel method. Dielectric properties of PMZT thin films were studied by varying the dopant amount and compared to those of pure PZT layers. At this end, on-wafer electrical measurements were conducted with a particular attention on leakage current characterization and RF measurements under DC bias voltage. We have shown that leakage current density decreased from 6.5 μA/cm2 to 1 μA/cm2 at 850kV/cm by doping PZT with Mn. Observed conduction mechanisms will be discussed in detail in the full-length paper. Moreover, developed PZT-based thin films exhibit high dielectric strengths achieving 2.1MV/cm and outstanding tunability as high as 85% (~7:1) @1GHz at bias voltage of 20V. Thus, PMZT tunability is among the highest ones reported in the literature for PZT-derived thin films but also for other piezoelectric materials. Indeed, in comparison, the tunability of BST-based materials, typically studied for voltage tunable applications, does not exceed 5:1. These remarkable results indicate that Mn-doped PZT thin films are promising candidates for RF tunable capacitors.

Simple Electrode-Barrier Structure Using Ir for Integration of PZT-Based High-Density Nonvolatile Memories

1998 ◽  
Vol 541 ◽  
Author(s):  
Kwang B. Lee ◽  
S. Tirumala ◽  
Y. Song ◽  
Sang O. Ryu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electrical Contact ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Barrier Properties ◽  
Pzt Thin Films ◽  
Nonvolatile Memories ◽  
Si Wafer ◽  
Current Behavior

AbstractWe have investigated the electrode-barrier properties of Ir for PZT-based nonvolatile memories. Ir layer was rf-sputtered onto a poly-Si coated Si wafer. PZT thin films were deposited on Ir/poly-Si/SiO2/Si by means of sol-gel spin coating. Highly c-axis oriented perovskite PZT thin films were obtained, which might be due to the interface-controlled growth. We found that Ir in itself acted as an oxygen barrier, which was confirmed from the measurement of P-E hysteresis loops with the electrical contact between top-electrode and bottom-poly-Si. Remanent polarization and coercive field of 1rO2/PZT/Ir/poly-Si capacitor were 20 μC/cm2and 30 kV/cm, respectively and the capacitor showed negligible polarization fatigue up to 1011 switching repetitions. However, the leakage current density at the field of larger than 80 kV/cm was high, which was believed to be related to the unknown phase in PZT caused by the reaction of PbO with bottom-Ir. Such high leakage current behavior could be successively improved by the insertion of vacuum-annealed IrOx buffer layer between PZT/Ir. The electrical properties of IrOx/PZT/annealed-IrO2Ir/poly-Si capacitors are also discussed.

Sol-gel doped-PZT thin films for integrated tunable capacitors

2015 ◽  
Vol 2015 (1) ◽  
pp. 000256-000261 ◽  
Author(s):  
Warda Benhadjala ◽  
Gwenael Le Rhun ◽  
Christel Dieppedale ◽  
Florence Sonnerat ◽  
Jennifer Guillaume ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Piezoelectric Materials ◽  
Sol Gel ◽  
Wafer Level ◽  
Pzt Thin Films ◽  
Tunable Capacitors ◽  
Metal Insulator Metal ◽  
Dc Bias

Integrated metal-insulator-metal (MIM) capacitors using sol-gel PZT doped with lanthanum (La, PLZT), manganese (Mn, PMZT) and niobium (Nb, PNZT) were successfully processed and characterized for tunable applications. Dielectric properties of doped-PZT were investigated and compared to those of pure PZT. Wafer-level measurements were conducted with a particular attention on tunability evaluation under DC bias voltage. Tunability, leakage current density and breakdown voltage of pure PZT thin films were 77.6% (i.e. 4.5:1) at 10kHz/10V, 4.8.10−5 A/cm2 at 870kV and 37.5V (i.e. 1.63 MV/cm) respectively. The breakdown voltage increased by 25% with La doping and by 50% with Nb and Mn. The lowest leakage current were achieved by PNZT (7.0.10−7 A/cm2 at 870kV) while PMZT films exhibited an outstanding tunability reaching 88.8% (i.e. 8.9:1) at 100 kHz and 20V. Enhanced performances of the developed doped-PZT were compared to the state of the art. Results indicate that electrical properties of sol-gel doped-PZT achieved those of conventionally deposited materials. It is noteworthy that obtained PMZT tunability is among the highest ones reported in the literature for PZT-derived thin films but also for other piezoelectric materials.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Structural, ferroelectric and optical properties of PZT thin films

2005 ◽  
Vol 369 (1-4) ◽  
pp. 135-142 ◽  
Author(s):  
S.K. Pandey ◽  
A.R. James ◽  
R. Raman ◽  
S.N. Chatterjee ◽  
Anshu Goyal ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pzt Thin Films

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties
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