The leakage current mechanism of PZT thin films deposited by in-situ sputtering

1996 ◽  
Vol 15 (12) ◽  
pp. 1030-1031 ◽  
Author(s):  
Y. S. Hwang ◽  
S. H. Paek ◽  
J. P. Mah
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pzt Thin Films ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Effect of zirconium doping on ferroelectric properties and leakage-current mechanism in Bi3.25 La0.75 Ti3 O12 (BLT) thin films

2010 ◽  
Vol 248 (4) ◽  
pp. 1010-1017 ◽  
Author(s):  
Prikshit Gautam ◽  
Sudipta Bhattacharyya ◽  
Sushil K. Singh ◽  
Ravi Kumar ◽  
Ram Pal Tandon
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Zirconium Doping ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Effect of Barium-to-Strontium on Leakage Current Mechanism of Sol-Gel BaxSr1-xTiO3 Thin Films

2014 ◽  
Vol 911 ◽  
pp. 185-189
Author(s):  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Sol Gel ◽  
Barium Strontium ◽  
Gel Technique ◽  
High Electric Fields ◽  
Leakage Current Mechanism ◽  
Limited Conduction ◽  
Current Mechanism

Ferroelectric barium strontium titanate (BaxSr1-xTiO3) thin films with different Ba content have been fabricated as MFM configuration using sol-gel technique. The effect of barium-to-strontium ratio on the leakage current mechanism of BaxSr1-xTiO3 thin films has been investigated. The results show that the leakage current density increases as Ba content increases, which attributed to the grain size effect. The leakage current for the tested films has been studied using log (J) vs log (E) plane, which shows three distinguished linear regions. These regions have been characterized using power law () to find that: the region at low electric fields (E < 20 KV/cm) is controlled by Ohmic conduction and the other two regions (E > 20 KV/cm) are due to space charge limited conduction, which is also confirmed via modified Langmuir-Child law. In addition, it is observed that at high electric fields region (E > 1.29×105 V/m) the films show Schottky emission (SE) and PooleFrenkel (PF) emission mechanisms.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

scholarly journals Estimation of steady-state leakage current in polycrystalline PZT thin films

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095025 ◽  
Author(s):  
Yury Podgorny ◽  
Konstantin Vorotilov ◽  
Alexander Sigov
Keyword(s):  
Thin Films ◽  
Steady State ◽  
Leakage Current ◽  
Pzt Thin Films

scholarly journals Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020 ◽  
Vol 67 (7) ◽  
pp. 1381-1389
Author(s):  
C. Martinella ◽  
T. Ziemann ◽  
R. Stark ◽  
A. Tsibizov ◽  
K. O. Voss ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ion ◽  
Single Event ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Oxygen Stability and Leakage Current Mechanism in Ferroelectric La-Substituted Bi4Ti3O12Single Crystals

2005 ◽  
Vol 44 (9B) ◽  
pp. 6998-7002 ◽  
Author(s):  
Yuji Noguchi ◽  
Masayuki Soga ◽  
Masatake Takahashi ◽  
Masaru Miyayama
Keyword(s):  
Leakage Current ◽  
Leakage Current Mechanism ◽  
Current Mechanism

scholarly journals Excess lead in the perovskite lattice of pzt thin films made by in-situ reactive sputtering

2001 ◽  
Vol 36 (1-4) ◽  
pp. 53-62 ◽  
Author(s):  
Paul Muralt ◽  
Stephane Hiboux ◽  
Claude Mueller ◽  
Thomas Maeder ◽  
Laurent Sagalowicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Pzt Thin Films ◽  
Excess Lead ◽  
Perovskite Lattice
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