Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates

2016 ◽  
Vol 109 (14) ◽  
pp. 143504 ◽  
Author(s):  
Sukhyung Park ◽  
Kyoungah Cho ◽  
Hyungon Oh ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Mechanical Characteristics ◽  
Stress Relieving ◽  
Izo Thin Film

Role of O2/Ar mixing ratio on the performances of IZO thin film transistors fabricated using a two-step deposition process

2011 ◽  
Vol 520 (5) ◽  
pp. 1475-1478 ◽  
Author(s):  
Won Kim ◽  
Sang-Hyuk Lee ◽  
Jung-Hwan Bang ◽  
Hyun-Seok Uhm ◽  
Jin-Seok Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Deposition Process ◽  
Mixing Ratio ◽  
Izo Thin Film

A Study on the Mechanical Stability of a-IGZO Based Inverter

2012 ◽  
Author(s):  
Byung-Jae Kim ◽  
Youn-Jea Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Mechanical Characteristics ◽  
Mechanical Stability ◽  
Electrical Performance ◽  
Oxide Semiconductors ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductors ◽  
Amorphous Ingazno

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are high performance transparent oxide semiconductors (TOS) that are attractive alternatives to poly-Si TFTs, because they provide better uniformity in terms of device characteristics, such as the threshold voltage and mobility. However, the electrical performance of flexible TFTs should have mechanical robustness against substrate bending and stretching without resultant changes. In this regard, many researchers have focused on improving mechanical stability as well as electrical performance of TFTs, such as elasticity and durability under artificial conditions. In this paper, the mechanical characteristics of an a-IGZO based inverters were numerically investigated. The results were graphically depicted when the device was bent by a total of 10% of its length in the x-axis. The mechanical properties of IGZO were assumed to be similar with the zinc oxide (ZnO).

scholarly journals A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 655
Author(s):  
Mohammad Javad Mirshojaeian Hosseini ◽  
Robert A. Nawrocki
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Mechanical Characteristics ◽  
Total Thickness ◽  
Silicon Oxides ◽  
Bending Radius ◽  
Semiconductor Fabrication ◽  
Thin Film Electronics

Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.

Electrically Stable, Solution-Processed Amorphous Oxide IZO Thin-Film Transistors Through a UV-Ozone Assisted Sol-Gel Approach

2014 ◽  
Vol 61 (4) ◽  
pp. 1093-1100 ◽  
Author(s):  
Thokchom Birendra Singh ◽  
Jacek Jaroslaw Jasieniak ◽  
Leonardo de Oliveira Tozi ◽  
Christopher David Easton ◽  
Mark Bown
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Stable Solution ◽  
Solution Processed ◽  
Amorphous Oxide ◽  
Izo Thin Film ◽  
Uv Ozone
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