A Study on the Mechanical Stability of a-IGZO Based Inverter

2012 ◽  
Author(s):  
Byung-Jae Kim ◽  
Youn-Jea Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Mechanical Characteristics ◽  
Mechanical Stability ◽  
Electrical Performance ◽  
Oxide Semiconductors ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductors ◽  
Amorphous Ingazno

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are high performance transparent oxide semiconductors (TOS) that are attractive alternatives to poly-Si TFTs, because they provide better uniformity in terms of device characteristics, such as the threshold voltage and mobility. However, the electrical performance of flexible TFTs should have mechanical robustness against substrate bending and stretching without resultant changes. In this regard, many researchers have focused on improving mechanical stability as well as electrical performance of TFTs, such as elasticity and durability under artificial conditions. In this paper, the mechanical characteristics of an a-IGZO based inverters were numerically investigated. The results were graphically depicted when the device was bent by a total of 10% of its length in the x-axis. The mechanical properties of IGZO were assumed to be similar with the zinc oxide (ZnO).

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors

2020 ◽  
Vol 53 (13) ◽  
pp. 135104 ◽  
Author(s):  
Dapeng Wang ◽  
Dan Li ◽  
Wenjing Zhao ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gradient Control ◽  
Amorphous Ingazno

Electrical and Photonic Functions in Transparent Oxide Semiconductors: Utilization of Built-in Nanostructure

2003 ◽  
Vol 796 ◽  
Author(s):  
Hideo Hosono
Keyword(s):  
High Performance ◽  
Epitaxial Thin Films ◽  
Oxide Semiconductors ◽  
Quantum Well Structures ◽  
Nano Structures ◽  
Effect Transistor ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductors ◽  
Multi Quantum Well ◽  
Positive Holes

AbstractWe review distinct photonic/electronic properties onginating from built-in nano-structures in transparent oxide based matenals, emphasizing potential of nanostructures hidden in crystal structure. Matenals focused are oxychalcogenides LaCuOCh (Ch=chalcogen ion) and homologous oxides InGaO3(ZnO)m(m=integer) having naturally formed multi-quantum well structures. Novel functions and devices ansing from the built-in nanostructure are: (1) modulation doping of positive holes and room temperature stable exciton in LaCuOCh, (2) high performance transparent field-effect transistor fabncated in InGaO3(ZnO)5 epitaxial thin films, and (3) conversion of insulator to persistent electronic conductor by carner doping in 12CaO 7A12O3 (C12A7).

High Performance Thin Film Transistors (TFTs) of Polycrystalline Silicon Crystallized by the Double Laser Crystallization (DLC) Technique

2005 ◽  
Author(s):  
Li Xu ◽  
Costas P. Grigoropoulos
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Crystalline Silicon ◽  
Solidification Process ◽  
Electrical Performance ◽  
Laser Crystallization ◽  
Definition Of ◽  
Melting And Solidification

Ultra-large grain poly-crystalline silicon has been formed by the double laser crystallization (DLC) method. In-situ images were captured to monitor the transient melting and solidification process in order to understand the crystallization induced by steep laser intensity gradients. SEM (scanning electron microscope) images of crystallized film after Secco etch revealed grain size up to 10μm. High performance thin film transistors (TFTs) were fabricated on the DLC-made poly-crystalline material. The highly localized crystal growth and well-defined orientation allowed precise definition of channels on large grains. The electrical performance of the fabricated devices was studied, indicating a field-effect mobility in the saturation range of undoped channel of 124 cm2/V.sec, threshold voltage of 0.2V and on-off current ratio of 1E8 for n-type devices.

scholarly journals Thermal Damage-Free Microwave Annealing with Efficient Energy Conversion for Fabricating of High-Performance a-IGZO Thin-Film Transistors on Flexible Substrates

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2630
Author(s):  
Ki-Woong Park ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Energy Conversion ◽  
Thin Film Transistors ◽  
High Performance ◽  
Thermal Damage ◽  
Process Condition ◽  
Electrical Performance ◽  
Resistive Load ◽  
Efficient Energy ◽  
Microwave Annealing

In this study, we applied microwave annealing (MWA) to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) without thermal damage to flexible polyimide (PI) substrates. Microwave energy is highly efficient for selective heating of materials when compared to conventional thermal annealing (CTA). We applied MWA and CTA to a-IGZO TFTs on PI substrate to evaluate the thermal damage to the substrates. While the PI substrate did not suffer thermal damage even at a high power in MWA, it suffered severe damage at high temperatures in CTA. Moreover, a-IGZO TFTs were prepared by MWA at 600 W for 2 min, whereas the same process using CTA required 30 min at a temperature of 300 °C, which is a maximum process condition in CTA without thermal damage to the PI substrate. Hence, MWA TFTs have superior electrical performance when compared to CTA TFTs, because traps/defects are effectively eliminated. Through instability evaluation, it was found that MWA TFTs were more stable than CTA TFTs against gate bias stress at various temperatures. Moreover, an MWA TFT-constructed resistive load inverter exhibited better static and dynamic characteristics than the CTA TFT-constructed one. Therefore, MWA is a promising thermal process with efficient energy conversion that allows the fabrication of high-performance electronic devices.

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