Improved Negative Bias Stress Stability of IZO Thin Film Transistors via Post-Vacuum Annealing of Solution Method

2013 ◽  
Vol 2 (7) ◽  
pp. Q99-Q103 ◽  
Author(s):  
Bo-Yuan Su ◽  
Sheng-Yuan Chu ◽  
Yung-Der Juang ◽  
Han Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Method ◽  
Vacuum Annealing ◽  
Negative Bias ◽  
Bias Stress ◽  
Izo Thin Film

Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress

2021 ◽  
Vol 21 (8) ◽  
pp. 4277-4284
Author(s):  
Sangmin Lee ◽  
Pyungho Choi ◽  
Minjun Song ◽  
Gaeun Lee ◽  
Nara Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Photon Energy ◽  
Photoelectron Spectroscopy ◽  
Thin Film Transistors ◽  
Bonding Energy ◽  
Negative Bias ◽  
Bias Stress ◽  
Blue Wavelength ◽  
Bias Instability ◽  
Izo Thin Film

In this study, we investigated the threshold voltage (Vth) instability of solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) prior to and after negative bias illumination stress (NBIS) with varying carrier suppressors (Ga, Al, Hf, and Zr). Variations in electrical properties of the IZO-based TFTs as a function of carrier suppressors were attributed to the differences in metal-oxygen bonding energy of the materials, which was numerically verified by calculating the relative oxygen deficient ratio from the X-ray photoelectron spectroscopy analysis. Furthermore, the values of Vth shift (ΔVth) of the devices subjected to negative gate bias stress under 635 nm (red), 530 nm (green), and 480 nm (blue) wavelength light irradiation increased as the incident photon energy increased. IZO TFTs doped with Ga atoms demonstrated weaker metal-oxygen bonding energy compared to the others and exhibited the largest ΔVth. This result was attributed to the suppressor-dependent distribution of neutral oxygen vacancies which determine the degrees of photon energy absorption in the IZO films. Then, the ΔVth instability of IZO-based TFTs under NBIS correlated well with a stretched exponential function.

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

Stability of zinc nitride thin-film transistors under positive and negative bias stress

2020 ◽  
Vol 171 ◽  
pp. 107841
Author(s):  
Miguel A. Dominguez ◽  
Jose Luis Pau ◽  
Andrés Redondo-Cubero
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Zinc Nitride

Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1918-1918
Author(s):  
Chia-Chun Yen ◽  
Chieh Lo ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
Cheewee Liu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress

2017 ◽  
Vol 38 (5) ◽  
pp. 592-595 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Bo-Wei Chen ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

scholarly journals Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 29
Author(s):  
Honglong Ning ◽  
Xuan Zeng ◽  
Hongke Zhang ◽  
Xu Zhang ◽  
Rihui Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Good Stability ◽  
Negative Bias ◽  
Bending Stress ◽  
Excellent Performance ◽  
Flexible Display ◽  
Bias Stress ◽  
Device Applications

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

scholarly journals Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

2014 ◽  
Vol 35 (3) ◽  
pp. 396-398 ◽  
Author(s):  
Jaewook Lee ◽  
Jaeman Jang ◽  
Hyeongjung Kim ◽  
Jiyoul Lee ◽  
Bang-Lin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Instability Mechanism ◽  
Bias Stress
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