Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles

Dong Zhang; Tao Kong; Miao Wang; Miao Xiao; Zhaochun Zhang; Guosheng Cheng

doi:10.1063/1.4962535

Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles

Applied Physics Letters ◽

10.1063/1.4962535 ◽

2016 ◽

Vol 109 (10) ◽

pp. 103508

Author(s):

Dong Zhang ◽

Tao Kong ◽

Miao Wang ◽

Miao Xiao ◽

Zhaochun Zhang ◽

...

Keyword(s):

Field Effect ◽

Au Nanoparticles ◽

Field Effect Transistors ◽

Si Nanowire

Download Full-text

pH sensing and noise characteristics of Si nanowire ion-sensitive field effect transistors

2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems ◽

10.1109/nems.2011.6017580 ◽

2011 ◽

Cited By ~ 2

Author(s):

Sungho Kim ◽

Kihyun Kim ◽

Taiuk Rim ◽

Chanhoon Park ◽

Donghwan Cho ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Ph Sensing ◽

Si Nanowire ◽

Noise Characteristics

Download Full-text

Investigation of the Role of Aspect Ratio for the Design of Si-Nanowire Field-Effect-Transistors in Ballistic Regime

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2013.1680 ◽

2013 ◽

Vol 5 (10) ◽

pp. 1087-1090 ◽

Cited By ~ 3

Author(s):

Basudev Nag Chowdhury ◽

Sanatan Chattopadhyay

Keyword(s):

Aspect Ratio ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Regime ◽

Si Nanowire

Download Full-text

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

Journal of the Korean Physical Society ◽

10.3938/jkps.55.28 ◽

2009 ◽

Vol 55 (1) ◽

pp. 28-31 ◽

Cited By ~ 2

Author(s):

Seung-Yong Lee ◽

Chan-Oh Jang ◽

Jung-Hwan Hyung ◽

Dong-Joo Kim ◽

Tae-Hong Kim ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Si Nanowire ◽

Fabrication And Characterization

Download Full-text

Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors

Applied Physics Letters ◽

10.1063/1.3644959 ◽

2011 ◽

Vol 99 (14) ◽

pp. 143503

Author(s):

Mincheol Shin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Quantum Mechanical ◽

Mechanical Coupling ◽

Si Nanowire ◽

P Type ◽

Hole Current

Download Full-text

Gate-Stack Engineering in $n$-Type Ultrascaled Si Nanowire Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2278573 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3325-3329

Author(s):

Mathieu Luisier ◽

Olaf Schenk

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Stack ◽

Si Nanowire

Download Full-text

Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles

2007 Digest of papers Microprocesses and Nanotechnology ◽

10.1109/imnc.2007.4456135 ◽

2007 ◽

Author(s):

Donghyuk Yeom ◽

Jeongmin Kang ◽

Changjoon Yoon ◽

Byoungjun Park ◽

Kihyun Keem ◽

...

Keyword(s):

Field Effect ◽

Au Nanoparticles ◽

Field Effect Transistors ◽

Floating Gate ◽

Zno Nanowire ◽

Memory Characteristics

Download Full-text

A comparative performance analysis of 10 nm Si nanowire and carbon nanotube field effect transistors

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) ◽

10.1109/nano.2017.8117443 ◽

2017 ◽

Cited By ~ 2

Author(s):

Imtiaj Khan ◽

Ovishek Morshed ◽

S. M. Mominuzzaman

Keyword(s):

Carbon Nanotube ◽

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Comparative Performance ◽

Si Nanowire

Download Full-text

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2017.10.027 ◽

2018 ◽

Vol 140 ◽

pp. 109-114 ◽

Cited By ~ 2

Author(s):

Jungkyu Jang ◽

Sungju Choi ◽

Jungmok Kim ◽

Tae Jung Park ◽

Byung-Gook Park ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Bias ◽

Ph Sensors ◽

Si Nanowire ◽

Rising Time

Download Full-text

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2007.915289 ◽

2008 ◽

Vol 29 (3) ◽

pp. 242-245 ◽

Cited By ~ 3

Author(s):

Runsheng Wang ◽

Ru Huang ◽

Yandong He ◽

Zhenhua Wang ◽

Gaosheng Jia ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Si Nanowire ◽

Bias Temperature Instability

Download Full-text

Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering

Small ◽

10.1002/smll.200901402 ◽

2009 ◽

Vol 5 (23) ◽

pp. 2761-2769 ◽

Cited By ~ 69

Author(s):

Muhammad Y. Bashouti ◽

Raymond T. Tung ◽

Hossam Haick

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Molecular Engineering ◽

Si Nanowire

Download Full-text