Short-pulse excitation of microwave plasma for efficient diamond growth

2016 ◽  
Vol 109 (9) ◽  
pp. 092102 ◽  
Author(s):  
Hideaki Yamada ◽  
Akiyoshi Chayahara ◽  
Yoshiaki Mokuno
Keyword(s):  
Microwave Plasma ◽  
Short Pulse ◽  
Diamond Growth ◽  
Pulse Excitation

Threshold current characteristics of GaAs lasers under short pulse excitation

1984 ◽  
Vol 20 (2) ◽  
pp. 63 ◽  
Author(s):  
N.A. Olsson ◽  
N.K. Dutta ◽  
W.T. Tsang ◽  
R.A. Logan
Keyword(s):  
Short Pulse ◽  
Threshold Current ◽  
Pulse Excitation ◽  
Current Characteristics

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

Low‐temperature diamond growth in a pulsed microwave plasma

1995 ◽  
Vol 13 (3) ◽  
pp. 1617-1618 ◽  
Author(s):  
Zoltan Ring ◽  
Thomas D. Mantei ◽  
Spirit Tlali ◽  
Howard E. Jackson
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
Diamond Growth

Dynamic plastic instabilities in response to short-pulse excitation : effects of slenderness ratio and damping

1988 ◽  
Vol 417 (1852) ◽  
pp. 31-44 ◽  
Keyword(s):  
Pressure Pulse ◽  
Numerical Solutions ◽  
Short Pulse ◽  
Slenderness Ratio ◽  
Pulse Excitation ◽  
Solution Technique ◽  
Plastic Model ◽  
Elastic Plastic ◽  
Transverse Pressure ◽  
Special Circumstances

Anomalous results, including counterintuitive permanent displacements and scatter of numerical solutions, have been found for certain fixed-pin supported beams deformed plastically by a transverse pressure pulse. Similar difficulties may be anticipated in other pulse loaded beams and plates with constraints that prevent in-plane displacements. The present studies show some of the special circumstances in which these occur, with a simple elastic-plastic model of Shanley type. In particular, effects of changing a geometrical ratio and of including damping are shown over a range of load magnitudes. The influence of damping is remarkable. Unpredictability of final displacement is evident in special circumstances, such that the final displacement is hypersensitive to the parameters of the loading, structure and solution technique.

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