scholarly journals III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

2016 ◽  
Vol 109 (9) ◽  
pp. 091101 ◽  
Author(s):  
B. Kunert ◽  
W. Guo ◽  
Y. Mols ◽  
B. Tian ◽  
Z. Wang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Applications ◽  
Ridge Structures

Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time

2017 ◽  
Vol 418 ◽  
pp. 380-387 ◽  
Author(s):  
Jenifar Sultana ◽  
Somdatta Paul ◽  
Anupam Karmakar ◽  
Ren Yi ◽  
Goutam Kumar Dalapati ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Growth Time ◽  
Optical Applications

Observation of solid-state reaction between a thin yttria film and a (0001) α-alumina substrate

1994 ◽  
Vol 52 ◽  
pp. 644-645
Author(s):  
J. R. Heffelfinger ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Solid State Reaction ◽  
Yttrium Aluminum Garnet ◽  
Secondary Phase ◽  
Ceramic Composites ◽  
Alumina Substrate ◽  
Transmission Electron ◽  
Alumina Fibers ◽  
Optical Applications

Transmission-electron microscopy (TEM), scanning-electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) were used to investigate the solid-state reaction between a thin yttria film and a (0001) α-alumina substrate. Systems containing Y2O3 (yttria) and Al2O3 (alumina) are seen in many technologically relevant applications. For example, yttria is being explored as a coating material for alumina fibers for metal-ceramic composites. The coating serves as a diffusion barrier and protects the alumina fiber from reacting with the metal matrix. With sufficient time and temperature, yttria in contact with alumina will react to form one or a combination of phases shown by the phase diagram in Figure l. Of the reaction phases, yttrium aluminum garnet (YAG) is used as a material for lasers and other optical applications. In a different application, YAG is formed as a secondary phase in the sintering of AIN. Yttria is added to AIN as a sintering aid and acts as an oxygen getter by reacting with the alumina in AIN to form YAG.

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Transport Properties Of Metallic Nanowires On Silicon Substrate

2014 ◽  
Vol 2 (1) ◽  
pp. 20-23
Author(s):  
Jaskiran Kaur ◽  
◽  
Surinder Singh ◽  
Keyword(s):  
Transport Properties ◽  
Silicon Substrate ◽  
Metallic Nanowires

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

2010 ◽  
Author(s):  
Fred Semendy ◽  
Patrick Taylor ◽  
Gregory Meissner ◽  
Priyalal Wijewarnasuriya
Keyword(s):  
Silicon Germanium ◽  
Near Infrared ◽  
Black Silicon ◽  
Optical Applications

DNA Hybridization on Chitosan-Functionalized Silicon Substrate

2016 ◽  
Vol 12 (5) ◽  
pp. 464-471 ◽  
Author(s):  
Amina Omar ◽  
El-Sayed M. El-Sayed ◽  
Mona S. Talaat ◽  
Medhat Ibrahim
Keyword(s):  
Silicon Substrate ◽  
Dna Hybridization
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