Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

2016 ◽  
Vol 120 (8) ◽  
pp. 084504 ◽  
Keyword(s):  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Current Conduction ◽  
Al2o3 Films

Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition

1997 ◽  
Vol 71 (25) ◽  
pp. 3604-3606 ◽  
Author(s):  
Y. Kim ◽  
S. M. Lee ◽  
C. S. Park ◽  
S. I. Lee ◽  
M. Y. Lee
Keyword(s):  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Substrate Dependence ◽  
Al2o3 Films

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

scholarly journals Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition

2019 ◽  
Vol 34 (10) ◽  
pp. 105004
Author(s):  
Pengfei Ma ◽  
Wenhao Guo ◽  
Jiamin Sun ◽  
Jiacheng Gao ◽  
Guanqun Zhang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Al2o3 Films
Sign in / Sign up

Export Citation Format

Share Document