Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells

2016 ◽  
Vol 120 (5) ◽  
pp. 055705 ◽  
Author(s):  
Duc V. Dinh ◽  
F. Brunner ◽  
M. Weyers ◽  
B. Corbett ◽  
P. J. Parbrook
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization

Exciton localization in submonolayer InAs/GaAs multiple quantum wells

1990 ◽  
Vol 42 (5) ◽  
pp. 3209-3212 ◽  
Author(s):  
R. Cingolani ◽  
O. Brandt ◽  
L. Tapfer ◽  
G. Scamarcio ◽  
G. C. La Rocca ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization

Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells

2016 ◽  
Vol 31 (8) ◽  
pp. 085006 ◽  
Author(s):  
Duc V Dinh ◽  
Silvino Presa ◽  
Pleun P Maaskant ◽  
Brian Corbett ◽  
Peter J Parbrook
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization

scholarly journals Correction to Exciton Localization of High-Quality ZnO/MgxZn1–xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer

2018 ◽  
Vol 1 (10) ◽  
pp. 5958-5958
Author(s):  
Wei-Rein Liu ◽  
Wei-Lun Huang ◽  
Yung-Chi Wu ◽  
Liang-Hsun Lai ◽  
Chia-Hung Hsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Buffer Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality ◽  
Exciton Localization ◽  
Y2o3 Buffer Layer

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

2016 ◽  
Author(s):  
Morteza Monavarian ◽  
Daniel Rosales ◽  
Bernard Gil ◽  
Natalia Izyumskaya ◽  
Saikat Das ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization

Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 197-202 ◽  
Author(s):  
X. C. Wei ◽  
L. Zhang ◽  
N. Zhang ◽  
J. X. Wang ◽  
J. M. Li
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Stark Effect ◽  
Turning Point ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Quantum Confined Stark Effect ◽  
Exciton Localization ◽  
Recombination Dynamics

ABSTRACTRecombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation energy decreases with the well thickness increasing. In addition, with temperature changing from 10K to room temperature, the “W” shape of full width of half maximum is also thickness related, and it becomes more obvious with the well thickness increasing. These results indicate that the dominant recombination dynamics change from exciton localization to quantum confined stark effect with well thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm thickness seems a turning point, which shows the best optimized optical and structural properties.

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