Resonant Raman scattering by acceptors in GaAs/AlxGa1−xAs multiple quantum wells: A probe of exciton localization

1990 ◽  
Vol 42 (17) ◽  
pp. 11035-11041 ◽  
Author(s):  
I. Brener ◽  
E. Cohen ◽  
Arza Ron ◽  
L. Pfeiffer
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering mediated by excitons in CdTe/CdZnTe multiple quantum wells

1992 ◽  
Vol 53 (1-6) ◽  
pp. 348-350
Author(s):  
Y. Garini ◽  
H. Tuffigo ◽  
I. Brener ◽  
E. Cohen ◽  
N. Magnea ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Resonant Raman ◽  
Resonant Raman Scattering

A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

1992 ◽  
Vol 12 (2) ◽  
pp. 273-277 ◽  
Author(s):  
D.S. Jiang ◽  
Y.H. Zhang ◽  
C. Abraham ◽  
K. Syassen ◽  
J.B. Xia ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Defect and strain redistribution in InxGa1−xAs/GaAs multiple quantum wells studied by resonant Raman scattering

1993 ◽  
Vol 63 (13) ◽  
pp. 1842-1844 ◽  
Author(s):  
J. Wagner ◽  
E. C. Larkins ◽  
N. Herres ◽  
J. D. Ralston ◽  
P. Koidl
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman Scattering in Strained and Relaxed InxGa1-xN/GaN Multiple Quantum Wells

2005 ◽  
Vol 494 ◽  
pp. 19-24
Author(s):  
S. Lazić ◽  
J.M. Calleja ◽  
F.B. Naranjo ◽  
S. Fernández ◽  
Enrique Calleja
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Raman Shift ◽  
Multiple Quantum ◽  
Direct Estimate ◽  
Resonant Raman ◽  
Resonant Raman Scattering

We present resonant Raman scattering measurements on strained and relaxed InxGa1-xN/GaN multiple quantum wells. The pseudomorphic sample does not show significant deviation of the A1(LO) phonon frequency with respect to GaN value due to a strong compensation of composition and strain effects which makes the frequency of this mode almost independent on In concentration. In contrast, the relaxed sample shows a marked decrease of the Raman frequency. Raman spectra excited in the energy range of sample emission have been recorded at room temperature. The resonant conditions have been attained using tuneable lasers in the blue-green spectral region. Resonant profiles are significantly blue-shifted with respect to the photoluminescence emission as a result of an inhomogeneous In distribution. In relaxed multiple quantum well, the Raman shift of the A1(LO) mode and the maximum of the resonant Raman profile give a direct estimate of the In concentration and its variation range.

scholarly journals RESONANT RAMAN SCATTERING IN (CdSe)1(ZnSe)3/ZnSe SHORT-PERIOD SUPERLATTICE MULTIPLE QUANTUM WELLS

1993 ◽  
Vol 42 (10) ◽  
pp. 1707
Author(s):  
HOU YONG-TIAN ◽  
HE GUO-SAN ◽  
ZHANG SHU-LIN ◽  
PENG ZHONG-LING ◽  
LI JIE ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Short Period ◽  
Resonant Raman ◽  
Resonant Raman Scattering

RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering
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