Exciton localization effects and heterojunction band offset in (Ga,In)P-(Al,Ga,In)P multiple quantum wells

1993 ◽  
Vol 47 (19) ◽  
pp. 12598-12604 ◽  
Author(s):  
Martin D. Dawson ◽  
Geoffrey Duggan
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum ◽  
Exciton Localization

Exciton localization in submonolayer InAs/GaAs multiple quantum wells

1990 ◽  
Vol 42 (5) ◽  
pp. 3209-3212 ◽  
Author(s):  
R. Cingolani ◽  
O. Brandt ◽  
L. Tapfer ◽  
G. Scamarcio ◽  
G. C. La Rocca ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization

Spectroscopic determination of the band offset in CdTe/Cd1-xMnxTe multiple quantum wells grown on InSb substrates

1990 ◽  
Vol 101 (1-4) ◽  
pp. 594-598 ◽  
Author(s):  
T.J. Gregory ◽  
C.P. Hilton ◽  
J.E. Nicholls ◽  
W.E. Hagston ◽  
J.J. Davies ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Spectroscopic Determination ◽  
Band Offset ◽  
Multiple Quantum

Determination of the band offset of CdTe/Cd1−xMnxTe multiple quantum wells with very lowxvalues

1995 ◽  
Vol 52 (7) ◽  
pp. 4732-4735 ◽  
Author(s):  
P. Chen ◽  
J. E. Nicholls ◽  
J. H. C. Hogg ◽  
T. Stirner ◽  
W. E. Hagston ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum

Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells

2016 ◽  
Vol 31 (8) ◽  
pp. 085006 ◽  
Author(s):  
Duc V Dinh ◽  
Silvino Presa ◽  
Pleun P Maaskant ◽  
Brian Corbett ◽  
Peter J Parbrook
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
Clayton L. Workman ◽  
Zhiming Wang ◽  
Wenquan Ma ◽  
Christi E. George ◽  
R. Panneer Selvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Detector ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum ◽  
Material System ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Long Wavelength Infrared

ABSTRACTWe report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

scholarly journals Correction to Exciton Localization of High-Quality ZnO/MgxZn1–xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer

2018 ◽  
Vol 1 (10) ◽  
pp. 5958-5958
Author(s):  
Wei-Rein Liu ◽  
Wei-Lun Huang ◽  
Yung-Chi Wu ◽  
Liang-Hsun Lai ◽  
Chia-Hung Hsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Buffer Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality ◽  
Exciton Localization ◽  
Y2o3 Buffer Layer
Sign in / Sign up

Export Citation Format

Share Document