scholarly journals Detection of atomic force microscopy cantilever displacement with a transmitted electron beam

2016 ◽  
Vol 109 (4) ◽  
pp. 043111 ◽  
Author(s):  
R. Wagner ◽  
T. J. Woehl ◽  
R. R. Keller ◽  
J. P. Killgore
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Atomic Force Microscopy Cantilever

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray

2007 ◽  
Vol 7 (2) ◽  
pp. 410-417 ◽  
Author(s):  
Guo-Jun Zhang ◽  
Takashi Tanii ◽  
Yuzo Kanari ◽  
Iwao Ohdomari
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Specificity ◽  
Nonspecific Binding ◽  
Self Assembled Monolayer ◽  
Incubation Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-IgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity.

Electron-Beam-Induced Carbon Contamination on Silicon: Characterization Using Raman Spectroscopy and Atomic Force Microscopy

2009 ◽  
Vol 16 (1) ◽  
pp. 13-20 ◽  
Author(s):  
Deborah Lau ◽  
Anthony E. Hughes ◽  
Tim H. Muster ◽  
Timothy J. Davis ◽  
A. Matthew Glenn
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Prolonged Exposure ◽  
Carbon Film ◽  
Field Enhancement ◽  
Film Deposition ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

AbstractElectron-beam-induced carbon film deposition has long been recognized as a side effect of scanning electron microscopy. To characterize the nature of this type of contamination, silicon wafers were subjected to prolonged exposure to 15 kV electron beam energy with a probe current of ∼300 pA. Using Raman spectroscopy, the deposited coating was identified as an amorphous carbon film with an estimated crystallite size of 125 Å. Using atomic force microscopy, the cross-sectional profile of the coating was found to be raised and textured, indicative of the beam raster pattern. A map of the Raman intensity across the coating showed increased intensity along the edges and at the corner of the film. The intensity profile was in excess of that which could be explained by thickness alone. The enhancement was found to correspond with a modeled local field enhancement induced by the coating boundary and showed that the deposited carbon coating generated a localized disturbance in the opto-electrical properties of the substrate, which is compared and contrasted with Raman edge enhancement that is produced by surface structure in silicon.

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