scholarly journals Response to “Comment on ‘Threshold switching via electric field induced crystallization in phase change memory devices’” [Appl. Phys. Lett. 102, 236101 (2012)]

2013 ◽  
Vol 102 (23) ◽  
pp. 236102
Author(s):  
J. A. Vazquez Diosdado ◽  
P. Ashwin ◽  
K. I. Kohary ◽  
C. D. Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Threshold Switching ◽  
Induced Crystallization ◽  
Change Memory

Threshold switching via electric field induced crystallization in phase-change memory devices

2012 ◽  
Vol 100 (25) ◽  
pp. 253105 ◽  
Author(s):  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
Krisztian I. Kohary ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Threshold Switching ◽  
Induced Crystallization ◽  
Change Memory

scholarly journals Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Nishant Saxena ◽  
Christoph Persch ◽  
Matthias Wuttig ◽  
Anbarasu Manivannan
Keyword(s):  
Thermal Stability ◽  
Electric Field ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Experimental Findings ◽  
Thermal Stability Of ◽  
Change Memory

AbstractPhase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory
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