Spin-orbit torque induced magnetization switching in Ta/Co20Fe60B20/MgO structures under small in-plane magnetic fields

2016 ◽  
Vol 108 (17) ◽  
pp. 172404 ◽  
Author(s):  
Jiangwei Cao ◽  
Yuqiang Zheng ◽  
Xianpeng Su ◽  
Liang Hao ◽  
Ying Wang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2

2019 ◽  
Vol 5 (8) ◽  
pp. eaaw8904 ◽  
Author(s):  
Xiao Wang ◽  
Jian Tang ◽  
Xiuxin Xia ◽  
Congli He ◽  
Junwei Zhang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Van Der Waals ◽  
The Other ◽  
Bilayer Structure ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Low Dimensional ◽  
Low Dimensional Materials

The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.

scholarly journals Magnetization switching driven by current-induced torque from weakly spin-orbit coupled Zr

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Z. C. Zheng ◽  
Q. X. Guo ◽  
D. Jo ◽  
D. Go ◽  
L. H. Wang ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Magnetization switching depending on magnetic fields applied to ferromagnetic MnAs nanodisks selectively-grown on Si (111) substrates

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125003
Author(s):  
Ryoma Horiguchi ◽  
Shinjiro Hara ◽  
Kozaburo Suzuki ◽  
Masaya Iida
Keyword(s):  
Magnetic Fields ◽  
Magnetization Switching

scholarly journals Magnetization switching induced by spin–orbit torque from Co2MnGa magnetic Weyl semimetal thin films

2021 ◽  
Vol 118 (6) ◽  
pp. 062402
Author(s):  
Ke Tang ◽  
Zhenchao Wen ◽  
Yong-Chang Lau ◽  
Hiroaki Sukegawa ◽  
Takeshi Seki ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Weyl Semimetal

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

scholarly journals Ultrafast magnetization switching by spin-orbit torques

2014 ◽  
Vol 105 (21) ◽  
pp. 212402 ◽  
Author(s):  
Kevin Garello ◽  
Can Onur Avci ◽  
Ioan Mihai Miron ◽  
Manuel Baumgartner ◽  
Abhijit Ghosh ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching ◽  
Ultrafast Magnetization
Sign in / Sign up

Export Citation Format

Share Document