scholarly journals Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling

2016 ◽  
Vol 119 (18) ◽  
pp. 181507 ◽  
Author(s):  
J. Cottom ◽  
G. Gruber ◽  
P. Hadley ◽  
M. Koch ◽  
G. Pobegen ◽  
...  
1998 ◽  
Vol 58 (8) ◽  
pp. 4892-4902 ◽  
Author(s):  
T. Wimbauer ◽  
M. S. Brandt ◽  
M. W. Bayerl ◽  
N. M. Reinacher ◽  
M. Stutzmann ◽  
...  

2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.


2000 ◽  
Vol 77 (13) ◽  
pp. 2018-2020 ◽  
Author(s):  
Xiang-Yang Liu ◽  
Wolfgang Windl ◽  
Michael P. Masquelier
Keyword(s):  

1998 ◽  
Vol 108 (1) ◽  
pp. 351-358 ◽  
Author(s):  
Petr Bouř ◽  
Cheok N. Tam ◽  
Jana Sopková ◽  
Frans R. Trouw

2011 ◽  
Vol 3 (4) ◽  
pp. 568-574 ◽  
Author(s):  
M. Fanciulli ◽  
A. Vellei ◽  
C. Canevali ◽  
S. Baldovino ◽  
G. Pennelli ◽  
...  

2021 ◽  
pp. 173-200
Author(s):  
Jia‐Bo Le ◽  
Xiao‐Hui Yang ◽  
Yong‐Bing Zhuang ◽  
Feng Wang ◽  
Jun Cheng

2021 ◽  
Author(s):  
Haili Jia ◽  
Canhui Wang ◽  
Chao Wang ◽  
Paulette Clancy
Keyword(s):  

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