Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling
2014 ◽
Vol 778-780
◽
pp. 414-417
◽
1998 ◽
Vol 108
(1)
◽
pp. 351-358
◽
Keyword(s):
2011 ◽
Vol 3
(4)
◽
pp. 568-574
◽