Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

2017 ◽  
Vol 506 ◽  
pp. 105-108
Author(s):  
Erman Erdoğan ◽  
Mutlu Kundakçı
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Schottky Barrier Diode ◽  
Current Voltage

The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode

2018 ◽  
Vol 85 (7) ◽  
pp. 59-65
Author(s):  
Moonkyong Na ◽  
Juyeon Keum ◽  
Jeong Hyun Moon ◽  
In Ho Kang ◽  
Wook Bahng
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Threading Dislocation ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Harmful Effect ◽  
Stacking Faults ◽  
Optical Microscope ◽  
Stacking Fault ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Room Temperature Photoluminescence

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

A semiconducting supramolecular Co(ii)-metallohydrogel: an efficient catalyst for single-pot aryl–S bond formation at room temperature

2019 ◽  
Vol 48 (46) ◽  
pp. 17388-17394 ◽  
Author(s):  
Subhendu Dhibar ◽  
Amiya Dey ◽  
Rajkumar Jana ◽  
Arpita Chatterjee ◽  
Gourab Kanti Das ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Bond Formation ◽  
Schottky Barrier Diode ◽  
Efficient Catalyst

A monoethanolamine based Co(ii)-metallohydrogel can act as a Schottky barrier diode device and a catalyst for single-pot aryl–S bond formation at room temperature.

Analysis and Simulation of Temperature and I-V Characteristics for SiC Schottky Barrier Diodes

2014 ◽  
Vol 875-877 ◽  
pp. 690-694
Author(s):  
Bo Yuan ◽  
Shi Bin Chen ◽  
Xiao Jia
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage ◽  
Reverse Current ◽  
Simulation Software ◽  
Schottky Barrier Diode ◽  
Forward Voltage ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics

In this paper, semiconductor simulation software ISE TCAD 10.0 was used to simulate W/SiC SBD forward voltage characteristics and reverse voltage characteristics at different temperatures on the basis of theoretical analysis, and the valuable results were achieved. Under the temperature range from 73 K to 773 K, the simulation results of W/SiC Schottky barrier diode forward voltage characteristics showed that forward characteristics were significant influenced by the temperature. At room temperature (303K), if bias voltage was low, the current will be exponential growing with voltage, and the turn-on voltage of W/SiC Schottky barrier diode was about 0.2V. If bias voltage was high, the current increased will be high, and the series resistance effect will become obvious. Under lower bias (2V), a different temperature from 73K to 573K had small impact on reverse current-voltage characteristics. The results showed that the device had the good rectifier characteristics, small reverse current, high breakdown voltage, and the device can steadily and long-term work in high temperature and other complex environment.

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