The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature

2020 ◽  
pp. 412732
Author(s):  
Elif Marıl
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Schottky Barrier Diodes ◽  
Electrical Parameters

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

scholarly journals High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 194 ◽  
Author(s):  
Guixia Yang ◽  
Yuanlong Pang ◽  
Yuqing Yang ◽  
Jianyong Liu ◽  
Shuming Peng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Radiation Detectors ◽  
High Dose ◽  
Irradiation Effect ◽  
Self Healing ◽  
Schottky Barrier Diodes ◽  
Induced Current ◽  
On Line

Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices’ performance is restored to some extent.

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