Temperature dependent electrical resistivity of liquid Sn

2016 ◽  
Author(s):  
A. V. Prajapati ◽  
Y. A. Sonvane ◽  
H. P. Patel ◽  
P. B. Thakor
Keyword(s):  
Electrical Resistivity ◽  
Temperature Dependent

MAGNETIC BEHAVIOUR OF UPdAl, UCuGa AND UCuSn

1993 ◽  
Vol 07 (01n03) ◽  
pp. 850-854 ◽  
Author(s):  
V.H. TRAN ◽  
R. TROĆ
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Low Temperatures ◽  
Magnetic Behaviour ◽  
Type Structure ◽  
Complex Structures ◽  
Temperature Dependent ◽  
Antiferromagnetic Ordering

Magnetic susceptibility and electrical resistivity have been measured on UCuGa, UCu1+xSn1−x, (x=0 and 0.1), and UPdAl. The first two compounds, crystallizing in the hexagonal CaIn2-type structure, show at low temperatures an antiferromagnetic ordering probably with complex structures. UPdAl, which adopts the orthorhombic TiNiSi-type structure, was found to be a weakly temperature-dependent paramagnet down to 4.2 K.

Electrical Resistivity and Magnetoresistance of the δ-FeZn10 Complex Intermetallic Phase

2013 ◽  
Vol 1517 ◽  
Author(s):  
P. Koželj ◽  
S. Jazbec ◽  
J. Dolinšek
Keyword(s):  
Electrical Resistivity ◽  
Intermetallic Phase ◽  
Structural Complexity ◽  
Weak Localization ◽  
Intrinsic Disorder ◽  
Atomic Clusters ◽  
Charge Carriers ◽  
Temperature Dependent ◽  
Temperature Dependent Resistivity ◽  
Complex Metallic Alloys

ABSTRACTThe δ-FeZn10 phase possesses high structural complexity typical of complex metallic alloys: a giant unit cell comprising 556 atoms, polyhedral atomic order with icosahedrally-coordinated environments, fractionally occupied lattice sites and statistically disordered atomic clusters that introduce intrinsic disorder into the structure. The electrical resistivity is large and exhibits a maximum at about 220 K. The magnetoresistance is sizeable, amounting to 1.5 % at 2 K in 9 T field. The temperature–dependent resistivity is discussed within the frame of the theory of slow charge carriers, applicable to metallic systems with weak dispersion of the electronic bands, where the electron motion changes from ballistic to diffusive upon heating. A comparison to the theory of weak localization is also made.

Coupled Electro-Thermal Mechanical Analyses for SMM Actuators Development

2004 ◽  
Author(s):  
C. Channy Wong ◽  
Randy R. Lober ◽  
Jason D. Hales
Keyword(s):  
Electrical Resistivity ◽  
Temperature Distribution ◽  
Joule Heating ◽  
Temperature Dependent ◽  
Strongly Coupled ◽  
Mechanical Responses ◽  
Thermal Actuators ◽  
Micro Actuators ◽  
And Performance

A coupled-physics analysis code has been developed to simulate the electrical, thermal, and mechanical responses of surface micromachined (SMM) actuators. Our objective is to optimize the design and performance of these micro actuators. Since many new designs of these electro-thermal actuators have shuttles or platforms between beams, calculating the local Joule heating requires a multi-dimensional electrostatics analysis. Moreover, the electrical solution is strongly coupled to the temperature distribution since the electrical resistivity is temperature dependent. Thus, it is essential to perform a more comprehensive simulation that solves the coupled electrostatics, thermal, and mechanical equations. Results of the coupled-physics analyses will be presented.

Temperature dependent electrical resistivity of a single strand of ferromagnetic single crystalline nanowire

2009 ◽  
Vol 95 (1) ◽  
pp. 013112 ◽  
Author(s):  
M. Venkata Kamalakar ◽  
A. K. Raychaudhuri ◽  
Xueyong Wei ◽  
Jason Teng ◽  
Philip D. Prewett
Keyword(s):  
Electrical Resistivity ◽  
Single Strand ◽  
Temperature Dependent ◽  
Single Crystalline

High-Temperature Thermoelectric Properties of Pb1-xSnxTe:In

2007 ◽  
Vol 1044 ◽  
Author(s):  
Vladimir Jovovic ◽  
Suraj Joottu Thiagarajan ◽  
Joseph P. Heremans ◽  
Dmitry Khokhlov ◽  
Tanya Komissarova ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Fermi Level ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Temperature Dependent ◽  
Resonant Energy ◽  
Properties Of Materials ◽  
Valence Bands ◽  
Increasing Temperature ◽  
Positive Effect

AbstractIndium in Pb1-xSnxTe alloys forms a resonant energy level in the conduction or valence bands, depending on x. In this study we investigate temperature dependence of the In level from 80 to 400K, complementing our previous work at 80 K. Measurements of electrical resistivity, thermopower, Hall and transverse Nernst-Ettinghausen effect are used to assess carrier mobility, Fermi level and scattering coefficient. Measurements are performed on a set of p and n type Pb1-xSnxTe:In with 0 < x < 30 at% and In up to 3 at%. We show that with increasing temperature the Fermi level crosses into the gap. It had been suggested theoretically that hybridization of the In level with one band at the Fermi level could have had a positive effect on the thermoelectric properties of materials, but the present results illustrate the need for temperature-dependent modeling and experimentation.

Experimental Research on the Conductive Property of MWCNT Nanopaper

2015 ◽  
Vol 727-728 ◽  
pp. 137-140
Author(s):  
A Ying Zhang
Keyword(s):  
Electrical Conductivity ◽  
Electrical Resistivity ◽  
Carbon Nanotube ◽  
Electrical Properties ◽  
The Self ◽  
Vacuum Deposition ◽  
Temperature Dependent ◽  
Polycarbonate Membrane ◽  
Multi Walled Carbon Nanotube ◽  
Conductive Property

This paper presents a systematic study of the nano-sized structure and temperature dependent electrical properties. A method of synthesizing the self-assembled multi-walled carbon nanotube (MWCNT) nanopaper on hydrophilic polycarbonate membrane was explored. The process is based on the very well-defined dispersion of nanotube and controlled pressure vacuum deposition procedure. The experiment results show that the ratio changes of MWCNT in the nanopaper could lead to the changes in the electrical conductivity efficiency of the nanopaper. Furthermore, the electrical resistivity of MWCNT nanopaper decreased as temperature increase.

Sintering Temperature-Dependent Chemical Defects and the Effect on the Electrical Resistivity of Thermoelectric ZnO

2014 ◽  
Vol 1 (1-2) ◽  
Author(s):  
Yu Zhao ◽  
Ashok Kumar ◽  
Giti A. Khodaparast ◽  
Amnah Eltahir ◽  
Hsin Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Property ◽  
Thermoelectric Properties ◽  
Carrier Density ◽  
Sintering Temperature ◽  
Sharp Decrease ◽  
Synthesis Temperature ◽  
Temperature Dependent ◽  
Al Doping

AbstractThermoelectric properties of zinc oxide (ZnO) are largely influenced by its electrical property. In this paper, we investigated the correlation between the electrical resistivity and synthesis temperature for aluminum (Al)-modified ZnO. At constant Al doping, the electrical resistivity of ZnO exhibited sharp decrease with increase in sintering temperature due to the increased carrier density resulting from Al

scholarly journals Existence of Partially Degenerate Electrical Transport in Intermetallic Cu2SnSe3 Thermoelectric System Sintered at Different Temperatures

2021 ◽  
Author(s):  
K. Gurukrishna ◽  
H. R. Nikhita ◽  
S. M. Mallikarjuna Swamy ◽  
Ashok Rao
Keyword(s):  
Electrical Resistivity ◽  
High Temperatures ◽  
Electrical Transport ◽  
Minority Carrier ◽  
Upward Movement ◽  
Temperature Dependent ◽  
Conventional Solid State Reaction ◽  
Different Temperatures ◽  
Transport Behaviour ◽  
Small Polarons

AbstractA detailed investigation on the temperature dependent electrical properties of Cu2SnSe3 system, synthesized via conventional solid-state reaction at different sintering temperatures are presented in this communication. All the samples exhibit degenerate semiconducting nature at low temperatures. The existence of small polarons and hence electron–phonon interactions are confirmed at temperatures below 400 K. A transition was observed from degenerate to non-degenerate semiconducting behaviour at high temperatures (T > 400 K). The study confirms the unusual transition in electrical resistivity as well as thermopower at high temperatures in all the compounds, demonstrating the existence of minority carrier excitation along with temperature-triggered ionisation of the defects. The transport behaviour is further supported by an upward movement of Fermi level away from the valence band. Highest weighted mobility of 8.2 cm2 V−1 s−1 at 673 K was obtained for the sample sintered at 1073 K. A considerable decrease in electrical resistivity with increase in temperature (T > 400 K) has driven the power factor to increase exponentially, thereby achieving highest value of 188 µV/mK2 (at 673 K) for the sample sintered at 673 K. Graphic abstract

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