Sintering Temperature-Dependent Chemical Defects and the Effect on the Electrical Resistivity of Thermoelectric ZnO

2014 ◽  
Vol 1 (1-2) ◽  
Author(s):  
Yu Zhao ◽  
Ashok Kumar ◽  
Giti A. Khodaparast ◽  
Amnah Eltahir ◽  
Hsin Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Property ◽  
Thermoelectric Properties ◽  
Carrier Density ◽  
Sintering Temperature ◽  
Sharp Decrease ◽  
Synthesis Temperature ◽  
Temperature Dependent ◽  
Al Doping

AbstractThermoelectric properties of zinc oxide (ZnO) are largely influenced by its electrical property. In this paper, we investigated the correlation between the electrical resistivity and synthesis temperature for aluminum (Al)-modified ZnO. At constant Al doping, the electrical resistivity of ZnO exhibited sharp decrease with increase in sintering temperature due to the increased carrier density resulting from Al

High-Temperature Thermoelectric Properties of Pb1-xSnxTe:In

2007 ◽  
Vol 1044 ◽  
Author(s):  
Vladimir Jovovic ◽  
Suraj Joottu Thiagarajan ◽  
Joseph P. Heremans ◽  
Dmitry Khokhlov ◽  
Tanya Komissarova ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Fermi Level ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Temperature Dependent ◽  
Resonant Energy ◽  
Properties Of Materials ◽  
Valence Bands ◽  
Increasing Temperature ◽  
Positive Effect

AbstractIndium in Pb1-xSnxTe alloys forms a resonant energy level in the conduction or valence bands, depending on x. In this study we investigate temperature dependence of the In level from 80 to 400K, complementing our previous work at 80 K. Measurements of electrical resistivity, thermopower, Hall and transverse Nernst-Ettinghausen effect are used to assess carrier mobility, Fermi level and scattering coefficient. Measurements are performed on a set of p and n type Pb1-xSnxTe:In with 0 < x < 30 at% and In up to 3 at%. We show that with increasing temperature the Fermi level crosses into the gap. It had been suggested theoretically that hybridization of the In level with one band at the Fermi level could have had a positive effect on the thermoelectric properties of materials, but the present results illustrate the need for temperature-dependent modeling and experimentation.

THERMOELECTRICITY OF Ca2.9Ce0.1Co4O9+δ BASED NANOCOMPOSITES WITH Cu2O NANOINCLUSION

2013 ◽  
Vol 27 (22) ◽  
pp. 1350108
Author(s):  
FANG JU LI
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Energy Harvesting ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Phonon Scattering ◽  
Temperature Dependent ◽  
Resistivity Measurements ◽  
Carrier Scattering ◽  
Scattering Centers

Ca 2.9 Ce 0.1 Co 4 O 9+δ/x wt% Cu 2 O nanocomposites have been studied as the thermoelectric materials for energy harvesting purpose. We evaluate the thermoelectric properties of the composites through temperature dependent thermopower, thermal conductivity and resistivity measurements. It is found that the introduction of Cu 2 O nanoparticles serves as phonon scattering centers, which reduces the thermal conductivity. The nanoinclusions contribute to a remarkable increase in electrical resistivity due to enhanced carrier scattering. As a result, Cu 2 O nanoinclusions do not succeed in improving ZT of Ca 2.9 Ce 0.1 Co 4 O 9+δ material.

Fabrication and Thermoelectric Properties of N-Type Bi2Te3 Based Compounds by Spark Plasma Sintering

2005 ◽  
Vol 486-487 ◽  
pp. 253-256 ◽  
Author(s):  
D.M. Lee ◽  
Cheol Ho Lim ◽  
Dong Choul Cho ◽  
Seung Y. Shin ◽  
Won Seung Cho
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Powder Size ◽  
Plasma Sintering ◽  
Spark Plasma

N-type Bi2Te3 based thermoelectric compound was prepared by spark plasma sintering with a temperature range of 340~460°C and powder size of ~75㎛, 76~150㎛, 151~250㎛. Thermoelectric properties of the compound were measured as a function of the sintering temperature and powder size. With increasing sintering temperature, the electrical resistivity and thermal conductivity of the compound greatly changed because of the increase in relative density. The Seebeck coefficient and electrical resistivity were varied largely with increasing powder size. Therefore, the compound sintered at 460°C, with the powder of ~75㎛, showed a figure of merit of 2.44 x 10-3/K. Also, the bending strength was 75MPa.

Sintering Temperature-Dependent Chemical Defects and the Effect on the Electrical Resistivity of Thermoelectric ZnO

ENERGYO ◽  
2018 ◽  
Author(s):  
Yu Zhao ◽  
Ashok Kumar ◽  
Giti A. Khodaparast ◽  
Amnah Eltahir ◽  
Hsin Wang ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Sintering Temperature ◽  
Temperature Dependent

Electrical Resistance and Seebeck Effect in Undoped Polycrystalline Zinc Oxide

2014 ◽  
Vol 605 ◽  
pp. 185-188 ◽  
Author(s):  
Faramarz Hossein-Babaei ◽  
S. Masoumi
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Ohmic Contacts ◽  
Atmospheric Condition ◽  
Oxide Semiconductors ◽  
Polycrystalline Zinc ◽  
Dry Pressing ◽  
Compositional Changes ◽  
Electrical Connections

Thermoelectric properties of metal oxide semiconductors are of increasing interest in the field of sensors design and fabrication. The oxide components in the majority of such applications are polycrystalline in which the charge transportation is controlled both by the microstructure and the bulk properties of the material. While the dependence of the electrical resistivity on the microstructural and compositional changes in these materials is well understood, the complications encountered with their thermoelectric properties, have remained unattended. Here, we report experimental data on the Seebeck coefficient of undoped polycrystalline zinc oxide measured on the ceramic pellets fabricated by dry pressing of the powder and sintering at 800 and 1000°C, in air. Aluminum ohmic contacts are used for electrical connections. Seebeck voltage and electrical resistivity are measured at various temperatures and different atmospheric condition at the presence of predetermined temperature gradients.

Synthesis and Thermoelectric Properties of N-Type Bi2Te2.7Se0.3 Compounds by Spark Plasma Sintering

2005 ◽  
Vol 486-487 ◽  
pp. 654-657
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
Ki Tae Kim ◽  
Seung Y. Shin ◽  
D.M. Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hydrogen Reduction ◽  
Sintering Temperature ◽  
Reduction Process ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Temperature Time

Thermoelectric properties of the spark plasma sintered n-type Bi2Te2.7Se0.3 compounds were characterized with the sintering temperature, time and hydrogen reduction process. The Seebeck coefficient, electrical resistivity and thermal conductivity were dependent on hydrogen reduction process as well as sintering temperature. The Seebeck coefficient and electrical resistivity decreased and thermal conductivity increased with reduction treatment and sintering temperature. The results suggest that the carrier density varies with the dissolved oxygen and Te vacancies generated during the pulverization process. The highest figure of merit of 3.11×10-3/K was obtained for the compounds spark plasma sintered at 460°C for 16min by using the reduced powders.

The Influence of Bi2O3 on SiO2-Al2O3-B2O3-RO Glass Propertiesarts

2014 ◽  
Vol 887-888 ◽  
pp. 86-89
Author(s):  
Ying Liang Tian ◽  
Jing Zhang ◽  
Shi Bing Sun ◽  
Ji Ye Fan
Keyword(s):  
Electrical Resistivity ◽  
High Temperature ◽  
Expansion Coefficient ◽  
Bismuth Oxide ◽  
Sintering Temperature ◽  
Oxide Content ◽  
Basic Composition ◽  
Wide Range ◽  
Melt Annealing ◽  
Annealing Method

In the paper, regarded SiO2-Al2O3-B2O3-RO system as basic composition, high-temperature glass glaze was prepared successfully by using Bi2O3 in place of Al2O3, and traditional melt annealing method was adopted .The influence of Bi2O3 on expansion coefficient, sintering temperature, electrical resistivity was investigated by DIL-2008, SJY sintering imager, Keythley2410. The results show that the sintering temperature of glass glaze has a wide range, which can reach 270°C, so it is easy to sinter; with the increasing of bismuth oxide content, expansion coefficient of glass glaze gradually increases, whereas sintering temperature and electrical resistivity continuously decreases.

scholarly journals Pullulan mediated zinc oxide microparticles: Effect of synthesis temperature

2020 ◽  
Vol 808 ◽  
pp. 012032 ◽  
Author(s):  
E D Mohamed Isa ◽  
N W Che Jusoh ◽  
R Hazan ◽  
K Shameli
Keyword(s):  
Zinc Oxide ◽  
Synthesis Temperature
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