Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals

2013 ◽  
Vol 421 ◽  
pp. 53-56 ◽  
Author(s):  
M. Isik ◽  
N.M. Gasanly
Keyword(s):  
Electrical Resistivity ◽  
Space Charge ◽  
Single Crystals ◽  
Space Charge Limited Current ◽  
Temperature Dependent ◽  
Limited Current ◽  
Space Charge Limited

Three-dimensional Anisotropic Electronic Properties of Solution Grown Organic Single Crystals Measured by Space-Charge Limited Current (SCLC)

2009 ◽  
Vol 1154 ◽  
Author(s):  
Beatrice Fraboni ◽  
Alessandro Fraleoni-Morgera ◽  
Anna Cavallini
Keyword(s):  
Space Charge ◽  
Single Crystals ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Crystal Thickness ◽  
Space Charge Limited Current ◽  
Differential Analysis ◽  
Limited Current ◽  
Structural Imperfections ◽  
Space Charge Limited

AbstractOrganic single crystals offer the interesting and unique opportunity to investigate the intrinsic electrical behaviour of organic materials, excluding hopping phenomena due to grain boundaries and structural imperfections. Their structural asymmetry permits also to investigate the correlation between their three-dimensional order and their charge transport characteristics. Here we report on millimeter-sized, solution-grown organic single crystals, based on 4-hydroxycyanobenzene (4HCB), which exhibit three-dimensional anisotropic electrical properties along the three crystallographic axes a, b (constituting the main crystal flat face) and c (the crystal thickness), measured over several different samples. The carrier mobility was determined by means of space charge limited current (SCLC) and air-gap field effect transistors fabricated with 4HCB single crystals and the measured value well correlate with the structural packing anisotropy of the molecular crystal. A differential analysis of SCLC curves allowed to determine the distribution and the concentration of the dominant electrically active density of states within the gap.

scholarly journals Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

2017 ◽  
Vol 8 ◽  
pp. 1277-1282 ◽  
Author(s):  
Vineeth Kumar Bandari ◽  
Lakshmi Varadharajan ◽  
Longqian Xu ◽  
Abdur Rehman Jalil ◽  
Mirunalini Devarajulu ◽  
...  
Keyword(s):  
Physical Properties ◽  
Space Charge ◽  
Charge Transport ◽  
Transport Properties ◽  
Space Charge Limited Current ◽  
Temperature Dependent ◽  
Organic Systems ◽  
Organic Nanocrystals ◽  
Limited Current ◽  
Space Charge Limited

The investigation of charge transport in organic nanocrystals is essential to understand nanoscale physical properties of organic systems and the development of novel organic nanodevices. In this work, we fabricate organic nanocrystal diodes contacted by rolled-up robust nanomembranes. The organic nanocrystals consist of vanadyl phthalocyanine and copper hexadecafluorophthalocyanine heterojunctions. The temperature dependent charge transport through organic nanocrystals was investigated to reveal the transport properties of ohmic and space-charge-limited current under different conditions, for instance, temperature and bias.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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