Quality improvement in a-Si films and their application to a-Si solar cells

1990 ◽  
Vol 37 (2) ◽  
pp. 397-402 ◽  
Author(s):  
T. Matsuoka ◽  
Y. Kuwano
Keyword(s):  
Quality Improvement ◽  
Solar Cells ◽  
Si Solar Cells ◽  
Si Films

High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
Shoichi Nakano ◽  
Shinya Tsuda ◽  
Hisaki Tarui ◽  
Tsuyoshi Takahama ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Reaction Chamber ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
New Material ◽  
Si Films ◽  
First Time

ABSTRACTAs a new preparation method for high-quality a-Si films, we have developed the super chamber, a separated UHV reaction chamber system. A low impurity concentration and excellent film properties were obtained by the super chamber. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.As a new material, amorphous superlattice structure films were fabricated by the photo-CVD method for the first time. Quantization effects and low damage to the interfaces were observed. Superlattice structure p-layer a-Si solar cells were fabricated for the first time, and a conversion efficiency of 10.5% was obtained.

The Influence of the Si-H2Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells

1989 ◽  
Vol 28 (Part 1, No. 10) ◽  
pp. 1762-1768 ◽  
Author(s):  
Noboru Nakamura ◽  
Tsuyoshi Takahama ◽  
Masao Isomura ◽  
Masato Nishikuni ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Si Films

Superlattice Structure a-Si Films Prepared by Photo-CVD Method and Their Application to a-Si Solar Cells.

1986 ◽  
Author(s):  
H. Tarui ◽  
T. Matsuyama ◽  
S. Tsuda ◽  
Y. Hishikawa ◽  
T. Takahama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
Si Films

Development of optimum p-nc-Si window layers for nc-Si solar cells

2017 ◽  
Vol 19 (32) ◽  
pp. 21357-21363 ◽  
Author(s):  
Praloy Mondal ◽  
Debajyoti Das
Keyword(s):  
Solar Cells ◽  
Low Power ◽  
Growth Temperature ◽  
Si Solar Cells ◽  
Si Films ◽  
P Type

p-Type nc-Si (p-nc-Si) films have been optimized under low growth temperature (∼180 °C) and low power (∼30 W) parametric conditions in 13.56 MHz RF-PECVD.

INDUSTRIALIZATION OF a-Si SOLAR CELLS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1155-C4-1164 ◽  
Author(s):  
Y. Kuwano ◽  
M. Ohnishi
Keyword(s):  
Solar Cells ◽  
Si Solar Cells

Studies on Backside Al-Contact Formation in Si Solar Cells: Fundamental Mechanisms

2008 ◽  
Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Przemyslaw Rupnowski ◽  
Helio Moutinho ◽  
Aziz Shaikh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Contact Formation ◽  
Si Solar Cells

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

2020 ◽  
Vol 10 (5) ◽  
pp. 1283-1289
Author(s):  
George C. Wilkes ◽  
Ajay D. Upadhyaya ◽  
Ajeet Rohatgi ◽  
Mool C. Gupta
Keyword(s):  
Solar Cells ◽  
Laser Crystallization ◽  
Selective Layer ◽  
Dopant Activation ◽  
Si Solar Cells

Ion shower doping for emitter fabrication in crystalline Si solar cells

2012 ◽  
Author(s):  
H. Hashiguchi ◽  
T. Tachibana ◽  
M. Aoki ◽  
T. Kojima ◽  
Y. Ohshita ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Solar Cells
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