Seed layer synthesis effect on the concentration of interface defects and emission spectra of ZnO nanorods/p-GaN light-emitting diode

2016 ◽  
Vol 214 (1) ◽  
pp. 1600333 ◽  
Author(s):  
Hatim Alnoor ◽  
Galia Pozina ◽  
Magnus Willander ◽  
Omer Nur
Keyword(s):  
Seed Layer ◽  
Light Emitting Diode ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Light Emitting ◽  
Interface Defects

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Type Layer ◽  
Growth Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

scholarly journals Fabrication and Characterization of Light Emitting Diode Based on n-ZnO Nanorods Grown Via a Low-Temperature

2020 ◽  
Vol 1535 ◽  
pp. 012009
Author(s):  
Sabah M. Mohammad ◽  
Nabeel M. Abd-Alghafour ◽  
Z. Hassan ◽  
Naser M. Ahmed ◽  
Amal Mohamed Ahmed Ali ◽  
...  
Keyword(s):  
Low Temperature ◽  
Light Emitting Diode ◽  
Zno Nanorods ◽  
Light Emitting ◽  
Fabrication And Characterization

Electrostatic Discharge Characteristics of InGaN/GaN Light-Emitting Diodes with Si-Doped Graded Superlattice

2015 ◽  
Vol 15 (10) ◽  
pp. 7733-7737 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Kee Young Lim ◽  
...  
Keyword(s):  
Light Emission ◽  
Electrostatic Discharge ◽  
Light Emitting Diode ◽  
Emission Spectra ◽  
Small Variation ◽  
Injection Current ◽  
Light Emitting ◽  
Current Voltage ◽  
Gan Led ◽  
Si Doped

We report the influences of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of an InGaN/GaN light-emitting diode (LED). For comparison, a conventional InGaN/GaN LED (C-LED) was also investigated. The luminous efficacy for the SiGSL-LED was 2.68 times stronger than that for the C-LED at the injection current of 20 mA. The resistances estimated from current–voltage (I–V) characteristic curves were 16.5 and 8.8 Ω for the C-LED and SiGSL-LED, respectively. After the ESD treatment at the voltages of 4000 and 6000 V, there was no significant change in the I–V curves for the SiGSL-LED. Also, there was small variation in the I–V characteristics for the SiGSL-LED at the ESD voltage of 8000 V. However, the I–V curves for the C-LED were drastically degraded with increasing ESD voltage. While the light emission was not observed at the injection current of 20 mA from the C-LED sample after the ESD treatment, the emission spectra for the SiGSL-LED sample were clearly measured with the output powers of 10.47, 9.66, and 7.27 mW for the ESD voltages of 4000, 6000, and 8000 V respectively.

Preparation and Luminescence Properties of Polymeric 2,5-Bis[2´-(8´´-alkoxyquinolin-2´´-yl)ethenyl]hydroquinone Derivatives

2002 ◽  
Vol 55 (8) ◽  
pp. 499 ◽  
Author(s):  
M.-A. Hsu ◽  
T. J. Chow
Keyword(s):  
Reduction Potential ◽  
Light Emitting Diode ◽  
Monomer Unit ◽  
Green Light ◽  
Emission Spectra ◽  
Coupling Reaction ◽  
Hydroxyl Groups ◽  
High Solubility ◽  
Light Emitting ◽  
Coumarin 6

A PPV-type polymer (1) incorporating 5,5�-diquinolinyl moieties is prepared by a Yamamoto homo-coupling reaction from the dibromide (2). Since all the hydroxyl groups were alkylated, this polymer showed high solubility in most organic solvents. It can be spin-coated readily to form a thin layer in the fabrication of light emitting diode (LED) devices. The adjacent quinoline rings are twisted to form a dihedral angle due to steric hindrance, so that π-conjugation is confined within each monomer unit. The emission spectra of (1) and (2) are nearly identical. The reduction potential of (1) was estimated to be –1.10 V (onset), with a band gap of 2.53 eV (490 nm). A single hetero-junction LED device fabricated by combining the films of poly(vinylkarbazol) (PVK) and (1) yielded promising results. The device ITO/PVK/(1)/Ca/Al exhibited a turn-on voltage at 6 V and reached a maximal brightness of 250 cd/m2 at 15 V. An alternate potential usage of (1) as an electron-injecting material was also explored on a green-light device using coumarin-6 as an emitter.

Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods∕ZnO:As-Film Structure

2012 ◽  
Vol 15 (5) ◽  
pp. H164 ◽  
Author(s):  
Jingchang Sun ◽  
Jiming Bian ◽  
Yan Wang ◽  
Yuxin Wang ◽  
Yu Gong ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Zno Nanorods ◽  
Film Structure ◽  
Light Emitting

Color Tunability of Blue Phosphors by Changing Cations for Near-UV InGaN-Based Light-Emitting Diode

2014 ◽  
Vol 986-987 ◽  
pp. 156-159
Author(s):  
Yi Wen Zhu ◽  
Fen Fen Hu ◽  
Mei Li Zhou ◽  
Ping Chen ◽  
Zheng Liang Wang
Keyword(s):  
Uv Light ◽  
Light Emitting Diode ◽  
Blue Emission ◽  
Emission Spectra ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Ionic Radii ◽  
Light Emitting ◽  
Triclinic Structure ◽  
The Difference

The serials of blue phosphors, CaAl2Si2O8: Eu2+ doped with different content Sr2+ and Mg2+ ions, were prepared by solid-state reaction at high temperature. And their structure and photo-luminescent properties were investigated. In Ca0.96-ySryAl2Si2O8: 0.04Eu2+ (y = 0.10, 0.30, 0.50, 0.70, 0.90) system, for y ≦ 0.03, all the compositions crystallize in triclinic structure of CaAl2Si2O8, and on further increase of y, the system undergoes a compositionally induced phase transition from triclinic to monoclinic structure. For Ca0.96-yMgyAl2Si2O8: 0.04Eu2+ (y = 0.10, 0.30, 0.50, 0.70, 0.90) system, for z ≦ 0.03, all the compositions are of triclinic structure of CaAl2Si2O8. With the further increase of z, other phase appears. The emission spectra of these phosphors show blue shift with the introduction of Sr2+ ions, and red shift with Mg2+ ions. The reason may be due to the difference ionic radii of Mg2+, Ca2+, Sr2+. These phosphors show excellent blue emission and broad excitation band in near-UV (ultraviolet) range. They may be potential phosphors for near-UV light-emitting diodes (LEDs).

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