Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

2016 ◽  
Author(s):  
Ravi Prakash ◽  
Davinder Kaur
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Dc Magnetron Sputtering

Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
F. Magnus ◽  
B. Agnarsson ◽  
A. S. Ingason ◽  
K. Leosson ◽  
S. Olafsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
High Power ◽  
Amorphous Matrix ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Temperature Range ◽  
Order Of Magnitude

ABSTRACTThin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

Investigation of Structural and Thermoelectric Properties of Lead Telluride Thin Films Deposited by DC Magnetron Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 253-256
Author(s):  
Theerawut Sumphao ◽  
Arthon Vora-Ud ◽  
Somporn Thaowankaew ◽  
Sunti Phewphong ◽  
Nuttee Khottoommee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Seebeck Coefficient ◽  
Lead Telluride ◽  
Phase Identification ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
Steady State Method

We prepare Lead Telluride (PbTe) thin film by DC magnetron sputtering method. The powder precursors of Pb and Te purity 99.99 % ratio 1:1 were mixed. PbTe Powder was pressed using as sputtering target. DC magnetron sputtering condition, the base pressure is 3.2×10−3 Torr, applied the argon gas (purity 99.99%) in vacuum chamber to obtained working pressure at 50×10−3 Torr. The sputtering power is 25 W and sputtering time is 30 minutes. Phase identification, morphology and film thickness have been investigated by X−ray diffraction and scanning electron microscope. Electrical resistivity and Seebeck coefficient of the PbTe thin films have been investigated by four probe steady state method. The results demonstrated that the crystal phase of PbTe is face center cubic (FCC) structure. The average PbTe films yielded film thickness is around 460 nm, the average electrical resistivity is 17 Ω m and seebeck coefficient is 8.0×10−5 V K─1.

scholarly journals Structural and mechanical properties of amorphous AlMgB14 thin films deposited by DC magnetron sputtering on Si, Al2O3 and MgO substrates

2020 ◽  
Vol 126 (2) ◽  
Author(s):  
Mohammad Noroozi ◽  
Andrejs Petruhins ◽  
Grzegorz Greczynski ◽  
Johanna Rosen ◽  
Per Eklund
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

scholarly journals Fabrication of titanium nitride thin films by DC magnetron sputtering on different types of subtrates for coating applications

2014 ◽  
Vol 17 (4) ◽  
pp. 65-73
Author(s):  
Thuong Tran Tuyet Vo ◽  
Tuan Anh Dao ◽  
Hang Thi Thu Cu ◽  
Hung Vu Tuan Le
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Titanium Nitride ◽  
Crystalline Structure ◽  
Dc Magnetron Sputtering ◽  
Negative Voltage ◽  
Optical Films ◽  
Different Types

Titanium nitride thin films (TiN) are fabricated by DC magnetron sputtering on different types of substrates such as glass substrates, PET substrates, substrate alloy (AISI 304) and drill steel. In this work we study the effect of distance target - substrate, sputtering time and negative voltage to the crystal structure, mechanical properties and optical films. The properties of thin films were studied by X-ray diffraction method Stylus, UV – Vis method and scanning electron microscopy. Results showed that the distance target - substrate, sputtering time and negative voltage affects the crystalline structure, mechanical properties and optical films. TiN films have been synthesized highly crystalline structure, crystal structure of thin films oriented along the the surface lattice (111), (200) and (311). Besides TiN thin films also have high reflectance in the visible and infrared range, good adhesion, high chemical durability.

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