A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

K. M. Niang; P. M. C. Barquinha; R. F. P. Martins; B. Cobb; M. J. Powell; A. J. Flewitt

doi:10.1063/1.4943249

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Applied Physics Letters ◽

10.1063/1.4943249 ◽

2016 ◽

Vol 108 (9) ◽

pp. 093505 ◽

Cited By ~ 8

Author(s):

K. M. Niang ◽

P. M. C. Barquinha ◽

R. F. P. Martins ◽

B. Cobb ◽

M. J. Powell ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Energy Analysis ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

Bias Stress ◽

Indium Gallium

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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Journal of Applied Physics ◽

10.1063/1.4870457 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134501 ◽

Cited By ~ 30

Author(s):

A. J. Flewitt ◽

M. J. Powell

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Energy Analysis ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

Indium Gallium

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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Cited By ~ 17

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Cited By ~ 4

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

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Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

Applied Physics Letters ◽

10.1063/1.3580611 ◽

2011 ◽

Vol 98 (15) ◽

pp. 153511 ◽

Cited By ~ 94

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.3357431 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102107 ◽

Cited By ~ 109

Author(s):

Sang-Yun Sung ◽

Jun Hyuk Choi ◽

Un Bin Han ◽

Ki Chang Lee ◽

Joon-Hyung Lee ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Ambient Atmosphere ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

Applied Physics Letters ◽

10.1063/1.4830368 ◽

2013 ◽

Vol 103 (20) ◽

pp. 202110 ◽

Cited By ~ 5

Author(s):

P. Liu ◽

T. P. Chen ◽

X. D. Li ◽

Z. Liu ◽

J. I. Wong ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

Indium Gallium

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The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2113 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Sol Gel ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Pre Treatment ◽

The Impact

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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.04.025 ◽

2013 ◽

Vol 86 ◽

pp. 41-44 ◽

Cited By ~ 16

Author(s):

Xiaoming Huang ◽

Chenfei Wu ◽

Hai Lu ◽

Fangfang Ren ◽

Dunjun Chen ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Carrier Transport ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Transport Mechanisms ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Effects of electron trapping and interface state generation on bias stress induced in indium–gallium–zinc oxide thin-film transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.08ng04 ◽

2014 ◽

Vol 53 (8S3) ◽

pp. 08NG04 ◽

Cited By ~ 11

Author(s):

Chang-Hoon Han ◽

Sang-Sub Kim ◽

Kwang-Ryul Kim ◽

Do-Hyun Baek ◽

Sang-Soo Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Interface State ◽

Oxide Thin Film ◽

Electron Trapping ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

State Generation ◽

Indium Gallium

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Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.3662869 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114503 ◽

Cited By ~ 37

Author(s):

Md Delwar Hossain Chowdhury ◽

Sang Hyun Ryu ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Annealing Time ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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