Small polaron-related recombination in BaxSr1−xTiO3 thin films by cathodoluminescence spectroscopy

2016 ◽  
Vol 108 (10) ◽  
pp. 102901 ◽  
Author(s):  
Adam J. Hauser ◽  
Evgeny Mikheev ◽  
Adam P. Kajdos ◽  
Anderson Janotti
Keyword(s):  
Thin Films ◽  
Small Polaron ◽  
Cathodoluminescence Spectroscopy

High temperature Seebeck coefficient, small-polaron conduction and work function of LiMn1.5Ni0.5O4 thin films

2020 ◽  
Vol 53 (47) ◽  
pp. 475304
Author(s):  
Sruthy Subash ◽  
Vijay Vaiyapuri ◽  
M Navaneethan ◽  
Yuvaraj Sivalingam ◽  
K Kamala Bharathi
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Work Function ◽  
Small Polaron ◽  
Polaron Conduction ◽  
Small Polaron Conduction

Growth and small polaron properties of epitaxial La1−xCaxMnO3 thin films

1998 ◽  
Vol 83 (11) ◽  
pp. 5913-5916 ◽  
Author(s):  
D. C. Worledge ◽  
L. Miéville ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Small Polaron

Small polaron conduction in CoMnNiO amorphous thin films

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1091-1092
Author(s):  
Tan Hui ◽  
Tao Mingde ◽  
Gin Dong ◽  
Han Ying
Keyword(s):  
Thin Films ◽  
Small Polaron ◽  
Amorphous Thin Films ◽  
Polaron Conduction ◽  
Small Polaron Conduction

Effect of epitaxial strain on small-polaron hopping conduction in Pr0.7(Ca0.6Sr0.4)0.3MnO3 thin films

2015 ◽  
Vol 106 (10) ◽  
pp. 102406 ◽  
Author(s):  
Jing Wang ◽  
Feng-xia Hu ◽  
Ying-ying Zhao ◽  
Yao Liu ◽  
Rong-rong Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Small Polaron ◽  
Hopping Conduction ◽  
Polaron Hopping ◽  
Small Polaron Hopping ◽  
Epitaxial Strain

Measuring the Absorption Coefficients of TiN Thin Films with Different Thickness

2017 ◽  
Vol 904 ◽  
pp. 120-124
Author(s):  
Hao Yu Chu ◽  
Yu Xiong Li ◽  
Cheng Yan Gu ◽  
Chun Ping Jiang
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cathodoluminescence Spectroscopy ◽  
Tin Thin Films ◽  
Tin Metal ◽  
Different Thickness

In this work, different thick TiN thin films were prepared by pulsed laser deposition on GaN substrates at 650°C. The crystal structure and morphology are characterized by X-ray Diffraction and Atomic Force Microscopy. We characterized the sample by cathodoluminescence spectroscopy at room temperature and measured the thickness of the film by a cross-sectional scanning electron microscopy. Combining the attenuation of light intensity and the thickness, the absorption coefficient of the samples can be estimated by the Beer-Lambert law. The absorption coefficients of TiN metal thin film obtained here are closed with each other. The optical properties may not change with increasing thickness.

Charge Reorganization Energy and Small Polaron Binding Energy of Rubrene Thin Films by Ultraviolet Photoelectron Spectroscopy

2012 ◽  
Vol 24 (7) ◽  
pp. 901-905 ◽  
Author(s):  
Steffen Duhm ◽  
Qian Xin ◽  
Shunsuke Hosoumi ◽  
Hirohiko Fukagawa ◽  
Kazushi Sato ◽  
...  
Keyword(s):  
Thin Films ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Small Polaron ◽  
Reorganization Energy ◽  
Ultraviolet Photoelectron Spectroscopy

The Morphology and Cathodoluminescence of GaN Thin Films

1996 ◽  
Vol 1 ◽  
Author(s):  
Carol Trager-Cowan ◽  
P. G. Middleton ◽  
K. P. O'Donnell
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Molecular Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Cathodoluminescence Spectroscopy ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

In this paper we compare gallium nitride (GaN) films grown by molecular beam epitaxy on sapphire (Al2O3), gallium arsenide (GaAs (111)B) and lithium gallate (LiGaO2) substrates. Atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and cathodoluminescence spectroscopy are used to characterise the films. From growth runs carried out to date, GaN films on GaAs substrates exhibit the best surface uniformity and the cleanest luminescence.

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