Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

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RSC Advances ◽  
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The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.


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2020 ◽  
Vol 46 (11) ◽  
pp. 1049-1052
Author(s):  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
A. I. Romanychev ◽  
I. A. Kasatkin ◽  
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